Effect of SAB process on GaN surfaces for low temperature bonding

Tsuguharu Wakamatsu; Tadatomo Suga; Masatake Akaike; Akitsu Shigetou; Eiji Higurashi

doi:10.1109/POLYTR.2007.4339134

Effect of SAB process on GaN surfaces for low temperature bonding

Tsuguharu Wakamatsu, Tadatomo Suga, Masatake Akaike, Akitsu Shigetou, Eiji Higurashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In evaluating the energy for local elastic deformation in contact field, the surface roughness of GaN of 3 nm which was required for SAB was realized even after surface activation process, and even an improvement in the roughness was obtained by Ar-FAB irradiation of 0 degree incident angle. Moreover, to ease the damage to the incident composition of the surface when the GaN surface was activated, it was understood that Ar-FAB is effective. Bonding of GaN to Al was carried out at room temperature the SAB method. As a result, GaN and bulk Al were successfully bonded with high bonding strength of 14.3 MPa.

Original language	English
Title of host publication	6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings
Pages	41-44
Number of pages	4
DOIs	https://doi.org/10.1109/POLYTR.2007.4339134
Publication status	Published - 2007
Externally published	Yes
Event	Polytronic 2007 - 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics - Tokyo, Japan Duration: 2007 Jan 15 → 2007 Jan 18

Publication series

Name	6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings

Other

Other	Polytronic 2007 - 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics
Country/Territory	Japan
City	Tokyo
Period	07/1/15 → 07/1/18

Keywords

GaN
The surface active bonding (SAB) method

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Polymers and Plastics

Access to Document

10.1109/POLYTR.2007.4339134

Cite this

Wakamatsu, T., Suga, T., Akaike, M., Shigetou, A., & Higurashi, E. (2007). Effect of SAB process on GaN surfaces for low temperature bonding. In 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings (pp. 41-44). [4339134] (6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings). https://doi.org/10.1109/POLYTR.2007.4339134

Effect of SAB process on GaN surfaces for low temperature bonding. / Wakamatsu, Tsuguharu; Suga, Tadatomo; Akaike, Masatake et al.

6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings. 2007. p. 41-44 4339134 (6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wakamatsu, T, Suga, T, Akaike, M, Shigetou, A & Higurashi, E 2007, Effect of SAB process on GaN surfaces for low temperature bonding. in 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings., 4339134, 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings, pp. 41-44, Polytronic 2007 - 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Tokyo, Japan, 07/1/15. https://doi.org/10.1109/POLYTR.2007.4339134

Wakamatsu T, Suga T, Akaike M, Shigetou A, Higurashi E. Effect of SAB process on GaN surfaces for low temperature bonding. In 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings. 2007. p. 41-44. 4339134. (6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings). doi: 10.1109/POLYTR.2007.4339134

Wakamatsu, Tsuguharu ; Suga, Tadatomo ; Akaike, Masatake et al. / Effect of SAB process on GaN surfaces for low temperature bonding. 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings. 2007. pp. 41-44 (6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings).

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abstract = "In evaluating the energy for local elastic deformation in contact field, the surface roughness of GaN of 3 nm which was required for SAB was realized even after surface activation process, and even an improvement in the roughness was obtained by Ar-FAB irradiation of 0 degree incident angle. Moreover, to ease the damage to the incident composition of the surface when the GaN surface was activated, it was understood that Ar-FAB is effective. Bonding of GaN to Al was carried out at room temperature the SAB method. As a result, GaN and bulk Al were successfully bonded with high bonding strength of 14.3 MPa.",

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AU - Wakamatsu, Tsuguharu

AU - Suga, Tadatomo

AU - Akaike, Masatake

AU - Shigetou, Akitsu

AU - Higurashi, Eiji

PY - 2007

Y1 - 2007

N2 - In evaluating the energy for local elastic deformation in contact field, the surface roughness of GaN of 3 nm which was required for SAB was realized even after surface activation process, and even an improvement in the roughness was obtained by Ar-FAB irradiation of 0 degree incident angle. Moreover, to ease the damage to the incident composition of the surface when the GaN surface was activated, it was understood that Ar-FAB is effective. Bonding of GaN to Al was carried out at room temperature the SAB method. As a result, GaN and bulk Al were successfully bonded with high bonding strength of 14.3 MPa.

AB - In evaluating the energy for local elastic deformation in contact field, the surface roughness of GaN of 3 nm which was required for SAB was realized even after surface activation process, and even an improvement in the roughness was obtained by Ar-FAB irradiation of 0 degree incident angle. Moreover, to ease the damage to the incident composition of the surface when the GaN surface was activated, it was understood that Ar-FAB is effective. Bonding of GaN to Al was carried out at room temperature the SAB method. As a result, GaN and bulk Al were successfully bonded with high bonding strength of 14.3 MPa.

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Effect of SAB process on GaN surfaces for low temperature bonding

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