Effect of S- and Se-passivation on MBE growth of MnAs thin films on GaAs(1 0 0) substrates

T. Uragami, K. Ono, Masaki Mizuguchi, H. Fujioka, M. Tanaka, M. Oshima

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Ferromagnetic MnAs thin films were grown on clean, S- and Se-passivated GaAs(1 0 0) substrates by molecular beam epitaxy (MBE). Growth modes of MnAs films on GaAs substrates depend on the surface treatment. On the clean and the Se-passivated surfaces MnAs films grow by a layer-by-layer mode, whereas on the S-passivated surface MnAs films grow by an island growth mode, and as a result polycrystalline films are obtained. Photoelectron spectroscopy study revealed that the Se overlayer on the Se-passivated GaAs substrates prevented Ga interdiffusion. We also found that the saturation magnetization of MnAs films on the Se-passivated surface was slightly larger than that on the clean and the S-passivated surfaces. This difference can be explained by the role of Se overlayer in preventing interdiffusion between MnAs and GaAs.

Original languageEnglish
Pages (from-to)561-565
Number of pages5
JournalJournal of Crystal Growth
Volume209
Issue number2-3
DOIs
Publication statusPublished - 2000 Jan 1
Externally publishedYes
EventThe 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Jpn
Duration: 1999 Jul 281999 Jul 30

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Effect of S- and Se-passivation on MBE growth of MnAs thin films on GaAs(1 0 0) substrates'. Together they form a unique fingerprint.

Cite this