Effect of S and O on the growth of chemical-vapor deposition diamond (100) surfaces

Hiroyuki Tamura, Hui Zhou, Seiichi Takami, Momoji Kubo, Akira Miyamoto, Mikka N-Gamo, Toshihiro Ando

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The effects of sulfur and oxygen on the growth mechanisms of chemical vapor depositions (CVD) diamond (100) surfaces were investigated using density functional theory (DFT) calculations. The DFT calculations revealed that the S and O atoms are spontaneously inserted into the dimer bond on the diamond (100) surface. It was shown that the S atom is incorporated into the diamond lattice via the formation of 3- and 4- coordinated S on the surface.

Original languageEnglish
Pages (from-to)5284-5291
Number of pages8
JournalJournal of Chemical Physics
Volume115
Issue number11
DOIs
Publication statusPublished - 2001 Sep 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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