Effect of reflected waves on the GISAXS analysis of as-grown capped Ge nanodots

Effect of layer structures on the GISAXS intensity analysis of Ge nanodots capped with Si layer has been examined by Born Approximation and Distorted Wave Born Approximation simulations. It is concluded that when the dots are small enough in the out-of-plane directions, most of the structural information are deduced by simple BA. The effect of refracted wave became important when the area of interest is close to the Yoneda line or the analysis deals with small difference in the intermediate q range.