TY - JOUR
T1 - Effect of reflected waves on the GISAXS analysis of as-grown capped Ge nanodots
AU - Okuda, H.
AU - Kuno, K.
AU - Ochiai, S.
AU - Usami, N.
AU - Nakajima, K.
AU - Sakata, O.
AU - Sasaki, S.
AU - Takata, M.
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2009
Y1 - 2009
N2 - Effect of layer structures on the GISAXS intensity analysis of Ge nanodots capped with Si layer has been examined by Born Approximation and Distorted Wave Born Approximation simulations. It is concluded that when the dots are small enough in the out-of-plane directions, most of the structural information are deduced by simple BA. The effect of refracted wave became important when the area of interest is close to the Yoneda line or the analysis deals with small difference in the intermediate q range.
AB - Effect of layer structures on the GISAXS intensity analysis of Ge nanodots capped with Si layer has been examined by Born Approximation and Distorted Wave Born Approximation simulations. It is concluded that when the dots are small enough in the out-of-plane directions, most of the structural information are deduced by simple BA. The effect of refracted wave became important when the area of interest is close to the Yoneda line or the analysis deals with small difference in the intermediate q range.
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U2 - 10.1088/1742-6596/184/1/012005
DO - 10.1088/1742-6596/184/1/012005
M3 - Article
AN - SCOPUS:69649100367
VL - 184
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
M1 - 012005
ER -