@inproceedings{fac9d593695e4754bbf6efb9f819b5fa,
title = "Effect of reducing thickness of TIN buffer layers on epitaxial growth of GaN layes",
abstract = "We investigated effect of reducing thickness of TiN buffer layers on growth of the smooth GaN layers. The sputtered TiN layers with thicknesses in the range of 2 to 100 nm were deposited on sapphire substrates. The sputtered TiN layers were exposed NH3 + H2 mixed gas atmosphere at about 1000°C to enrich nitrogen concentration of the layers. GaN layers were deposited on the nitrogen-enriched TiN layer using a MOCVD method. Average grain size of the nitrogen-enriched TiN layer was minimized at the thickness of 5 nm. In the initial stages of GaN growth, density of GaN hexagons grown on the 5nm-thick TiN layers was the highest. The 2μm-thick GaN layers grown on the 5nm-thick TiN layers exhibited the smoothest surface. Thus, the 5nm thickness is believed to be the best thickness for the smooth GaN growth on the sapphire/TiN substrates.",
keywords = "Buffer layers, Epitaxial growth, Film thickness, GaN, TIN",
author = "Kazuhiro Ito and Yu Uchida and Sangjin Lee and Susumu Tsukimoto and Yuhei Lkemoto and Koji Hirata and Toshiya Uemura and Masanori Murakami",
year = "2007",
month = jan,
day = "1",
doi = "10.4028/0-87849-462-6.1217",
language = "English",
isbn = "0878494626",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 2",
pages = "1217--1220",
booktitle = "Selected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6",
edition = "PART 2",
note = "6th Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6 ; Conference date: 05-11-2007 Through 09-11-2007",
}