Effect of reducing thickness of TIN buffer layers on epitaxial growth of GaN layes

Kazuhiro Ito, Yu Uchida, Sangjin Lee, Susumu Tsukimoto, Yuhei Lkemoto, Koji Hirata, Toshiya Uemura, Masanori Murakami

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We investigated effect of reducing thickness of TiN buffer layers on growth of the smooth GaN layers. The sputtered TiN layers with thicknesses in the range of 2 to 100 nm were deposited on sapphire substrates. The sputtered TiN layers were exposed NH3 + H2 mixed gas atmosphere at about 1000°C to enrich nitrogen concentration of the layers. GaN layers were deposited on the nitrogen-enriched TiN layer using a MOCVD method. Average grain size of the nitrogen-enriched TiN layer was minimized at the thickness of 5 nm. In the initial stages of GaN growth, density of GaN hexagons grown on the 5nm-thick TiN layers was the highest. The 2μm-thick GaN layers grown on the 5nm-thick TiN layers exhibited the smoothest surface. Thus, the 5nm thickness is believed to be the best thickness for the smooth GaN growth on the sapphire/TiN substrates.

    Original languageEnglish
    Title of host publicationSelected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6
    PublisherTrans Tech Publications Ltd
    Pages1217-1220
    Number of pages4
    EditionPART 2
    ISBN (Print)0878494626, 9780878494620
    DOIs
    Publication statusPublished - 2007 Jan 1
    Event6th Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6 - Jeju, Korea, Republic of
    Duration: 2007 Nov 52007 Nov 9

    Publication series

    NameMaterials Science Forum
    NumberPART 2
    Volume561-565
    ISSN (Print)0255-5476
    ISSN (Electronic)1662-9752

    Other

    Other6th Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6
    CountryKorea, Republic of
    CityJeju
    Period07/11/507/11/9

    Keywords

    • Buffer layers
    • Epitaxial growth
    • Film thickness
    • GaN
    • TIN

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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