Effect of rear-surface buffer layer on performance of lift-off Cu(In,Ga)Se2 solar cells

Kenta Aoyagi, Akihiro Tamura, Hideyuki Takakura, Takashi Minemoto

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The effect of an Au and MoOx rear-surface buffer layer inserted between Cu(In,Ga)Se2 (CIGS) and ZnO:Al on solar cell performances was examined. The lift-off CIGS solar cell without a rear-surface buffer layer showed particular characteristics of two series-connected diodes in the reverse direction, and its short-circuit current density was almost zero. In contrast, the Au or MoOx rear-surface buffer layer improved these characteristics. Although the lift-off CIGS solar cell with the Au rear-surface buffer layer showed shunt characteristics and low efficiency, the efficiency of the lift-off CIGS solar cell with the MoOx rear-surface buffer layer was approximately 50% of that of substrate-type CIGS solar cells. Diode parameters of lift-off CIGS solar cells were determined by fitting analysis of current density-voltage curves using a proposed new equivalent circuit model for lift-off CIGS solar cells.

Original languageEnglish
Article number05FW05
JournalJapanese journal of applied physics
Volume53
Issue number5 SPEC. ISSUE 1
DOIs
Publication statusPublished - 2014 May
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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