TY - GEN
T1 - Effect of process temperature of Al2O3 atomic layer deposition using accurate process gasses supply system
AU - Sugita, H.
AU - Koda, Y.
AU - Suwa, T.
AU - Kuroda, R.
AU - Goto, T.
AU - Ishii, H.
AU - Yamashita, S.
AU - Teramoto, A.
AU - Sugawa, S.
AU - Ohmi, T.
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2015
Y1 - 2015
N2 - Al2O3 is one of the most important high-k materials for high density on-chip metal-insulator-metal (MIM) capacitors as well as gate insulator for semiconductor power devices. In this paper, using the developed atomic layer deposition (ALD) process equipment with multiple oxidation methods and accurate process gas supply system adapted to high temperature usage, the impact of the process temperature on the electrical characteristics of Al2O3 films was investigated. It was found that the substrate material must not be oxidized at the trimethylaluminum (TMA) - oxidation step of ALD. An excessive high temperature may cause decomposition of TMA, so the process temperature should be controlled sufficiently low in order to obtain one layer TMA adsorbing on the wafer. However, this tends to cause lowering oxidation ability, so it is necessary to remove carbon in the Al2O3 films after the ALD. Post ALD process, such as post deposition anneal (PDA) is required.
AB - Al2O3 is one of the most important high-k materials for high density on-chip metal-insulator-metal (MIM) capacitors as well as gate insulator for semiconductor power devices. In this paper, using the developed atomic layer deposition (ALD) process equipment with multiple oxidation methods and accurate process gas supply system adapted to high temperature usage, the impact of the process temperature on the electrical characteristics of Al2O3 films was investigated. It was found that the substrate material must not be oxidized at the trimethylaluminum (TMA) - oxidation step of ALD. An excessive high temperature may cause decomposition of TMA, so the process temperature should be controlled sufficiently low in order to obtain one layer TMA adsorbing on the wafer. However, this tends to cause lowering oxidation ability, so it is necessary to remove carbon in the Al2O3 films after the ALD. Post ALD process, such as post deposition anneal (PDA) is required.
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U2 - 10.1149/06604.0305ecst
DO - 10.1149/06604.0305ecst
M3 - Conference contribution
AN - SCOPUS:84931329711
T3 - ECS Transactions
SP - 305
EP - 314
BT - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
A2 - Roozeboom, F.
A2 - Narayanan, V.
A2 - Kakushima, K.
A2 - Timans, P. J.
A2 - Gusev, E. P.
A2 - Karim, Z.
A2 - DeGendt, S.
PB - Electrochemical Society Inc.
T2 - Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
Y2 - 24 May 2015 through 28 May 2015
ER -