@inproceedings{0719ca26f20943f4a61bbacd6c3346b6,
title = "Effect of process temperature of Al2O3 atomic layer deposition using accurate process gasses supply system",
abstract = "Al2O3 is one of the most important high-k materials for high density on-chip metal-insulator-metal (MIM) capacitors as well as gate insulator for semiconductor power devices. In this paper, using the developed atomic layer deposition (ALD) process equipment with multiple oxidation methods and accurate process gas supply system adapted to high temperature usage, the impact of the process temperature on the electrical characteristics of Al2O3 films was investigated. It was found that the substrate material must not be oxidized at the trimethylaluminum (TMA) - oxidation step of ALD. An excessive high temperature may cause decomposition of TMA, so the process temperature should be controlled sufficiently low in order to obtain one layer TMA adsorbing on the wafer. However, this tends to cause lowering oxidation ability, so it is necessary to remove carbon in the Al2O3 films after the ALD. Post ALD process, such as post deposition anneal (PDA) is required.",
author = "H. Sugita and Y. Koda and T. Suwa and R. Kuroda and T. Goto and H. Ishii and S. Yamashita and A. Teramoto and S. Sugawa and T. Ohmi",
year = "2015",
month = jan,
day = "1",
doi = "10.1149/06604.0305ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "305--314",
editor = "F. Roozeboom and V. Narayanan and K. Kakushima and Timans, {P. J.} and Gusev, {E. P.} and Z. Karim and S. DeGendt",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5",
edition = "4",
note = "Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",
}