Effect of process temperature of Al2O3 atomic layer deposition using accurate process gasses supply system

H. Sugita; Y. Koda; T. Suwa; R. Kuroda; T. Goto; H. Ishii; S. Yamashita; A. Teramoto; S. Sugawa; T. Ohmi

doi:10.1149/06604.0305ecst

Effect of process temperature of Al₂O₃ atomic layer deposition using accurate process gasses supply system

H. Sugita, Y. Koda, T. Suwa, R. Kuroda, T. Goto, H. Ishii, S. Yamashita, A. Teramoto, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Al₂O₃ is one of the most important high-k materials for high density on-chip metal-insulator-metal (MIM) capacitors as well as gate insulator for semiconductor power devices. In this paper, using the developed atomic layer deposition (ALD) process equipment with multiple oxidation methods and accurate process gas supply system adapted to high temperature usage, the impact of the process temperature on the electrical characteristics of Al₂O₃ films was investigated. It was found that the substrate material must not be oxidized at the trimethylaluminum (TMA) - oxidation step of ALD. An excessive high temperature may cause decomposition of TMA, so the process temperature should be controlled sufficiently low in order to obtain one layer TMA adsorbing on the wafer. However, this tends to cause lowering oxidation ability, so it is necessary to remove carbon in the Al₂O₃ films after the ALD. Post ALD process, such as post deposition anneal (PDA) is required.

Original language	English
Title of host publication	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
Editors	F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, S. DeGendt
Publisher	Electrochemical Society Inc.
Pages	305-314
Number of pages	10
Edition	4
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06604.0305ecst
Publication status	Published - 2015
Event	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States Duration: 2015 May 24 → 2015 May 28

Publication series

Name	ECS Transactions
Number	4
Volume	66
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
Country/Territory	United States
City	Chicago
Period	15/5/24 → 15/5/28

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/06604.0305ecst

Cite this

Sugita, H., Koda, Y., Suwa, T., Kuroda, R., Goto, T., Ishii, H., Yamashita, S., Teramoto, A., Sugawa, S., & Ohmi, T. (2015). Effect of process temperature of Al₂O₃ atomic layer deposition using accurate process gasses supply system. In F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, & S. DeGendt (Eds.), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 (4 ed., pp. 305-314). (ECS Transactions; Vol. 66, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/06604.0305ecst

Effect of process temperature of Al₂O₃ atomic layer deposition using accurate process gasses supply system. / Sugita, H.; Koda, Y.; Suwa, T. et al.

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. ed. / F. Roozeboom; V. Narayanan; K. Kakushima; P. J. Timans; E. P. Gusev; Z. Karim; S. DeGendt. 4. ed. Electrochemical Society Inc., 2015. p. 305-314 (ECS Transactions; Vol. 66, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sugita, H, Koda, Y, Suwa, T , Kuroda, R , Goto, T, Ishii, H, Yamashita, S, Teramoto, A, Sugawa, S & Ohmi, T 2015, Effect of process temperature of Al₂O₃ atomic layer deposition using accurate process gasses supply system. in F Roozeboom, V Narayanan, K Kakushima, PJ Timans, EP Gusev, Z Karim & S DeGendt (eds), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. 4 edn, ECS Transactions, no. 4, vol. 66, Electrochemical Society Inc., pp. 305-314, Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting, Chicago, United States, 15/5/24. https://doi.org/10.1149/06604.0305ecst

Sugita H, Koda Y, Suwa T , Kuroda R , Goto T, Ishii H et al. Effect of process temperature of Al₂O₃ atomic layer deposition using accurate process gasses supply system. In Roozeboom F, Narayanan V, Kakushima K, Timans PJ, Gusev EP, Karim Z, DeGendt S, editors, Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. 4 ed. Electrochemical Society Inc. 2015. p. 305-314. (ECS Transactions; 4). doi: 10.1149/06604.0305ecst

Sugita, H. ; Koda, Y. ; Suwa, T. et al. / Effect of process temperature of Al₂O₃ atomic layer deposition using accurate process gasses supply system. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. editor / F. Roozeboom ; V. Narayanan ; K. Kakushima ; P. J. Timans ; E. P. Gusev ; Z. Karim ; S. DeGendt. 4. ed. Electrochemical Society Inc., 2015. pp. 305-314 (ECS Transactions; 4).

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AB - Al2O3 is one of the most important high-k materials for high density on-chip metal-insulator-metal (MIM) capacitors as well as gate insulator for semiconductor power devices. In this paper, using the developed atomic layer deposition (ALD) process equipment with multiple oxidation methods and accurate process gas supply system adapted to high temperature usage, the impact of the process temperature on the electrical characteristics of Al2O3 films was investigated. It was found that the substrate material must not be oxidized at the trimethylaluminum (TMA) - oxidation step of ALD. An excessive high temperature may cause decomposition of TMA, so the process temperature should be controlled sufficiently low in order to obtain one layer TMA adsorbing on the wafer. However, this tends to cause lowering oxidation ability, so it is necessary to remove carbon in the Al2O3 films after the ALD. Post ALD process, such as post deposition anneal (PDA) is required.

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