Effect of pressure on the size of energy gap in semiconducting mixed-valent rare-earth compounds

S. Yoshii; M. Kasaya; H. Takahashi; N. Mori

doi:10.1016/0921-4526(96)00138-X

Effect of pressure on the size of energy gap in semiconducting mixed-valent rare-earth compounds

S. Yoshii, M. Kasaya, H. Takahashi, N. Mori

Institute for Materials Research (IMR)

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

We have synthesized CeRhBi and CeRhAs and found that these compounds crystallize in the ε-TiNiSi-type structure. It is found that CeRhBi is a heavy-fermion compound, whereas CeRhAs is a mixed-valent semiconductor with an energy gap of 144 K, about 10 times larger than that of CeRhSb. Various experimental results throughout the CeRhX series also vary in the sequence CeRh (Bi-Sb-As). However, the gap observed in CeRhAs is suppressed by external-pressure, suggesting that the chemical and the external pressure seem to cause opposite effects on the size of energy gap in these compounds. These results are compared with those for mixed-valent semiconductors Ce₃Pt₃Bi₄ and Ce₃Pt₃Sb₄.

Original language	English
Pages (from-to)	421-425
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	223-224
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(96)00138-X
Publication status	Published - 1996 Jun 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "We have synthesized CeRhBi and CeRhAs and found that these compounds crystallize in the ε-TiNiSi-type structure. It is found that CeRhBi is a heavy-fermion compound, whereas CeRhAs is a mixed-valent semiconductor with an energy gap of 144 K, about 10 times larger than that of CeRhSb. Various experimental results throughout the CeRhX series also vary in the sequence CeRh (Bi-Sb-As). However, the gap observed in CeRhAs is suppressed by external-pressure, suggesting that the chemical and the external pressure seem to cause opposite effects on the size of energy gap in these compounds. These results are compared with those for mixed-valent semiconductors Ce3Pt3Bi4 and Ce3Pt3Sb4.",

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AU - Yoshii, S.

AU - Kasaya, M.

AU - Takahashi, H.

AU - Mori, N.

PY - 1996/6/2

Y1 - 1996/6/2

N2 - We have synthesized CeRhBi and CeRhAs and found that these compounds crystallize in the ε-TiNiSi-type structure. It is found that CeRhBi is a heavy-fermion compound, whereas CeRhAs is a mixed-valent semiconductor with an energy gap of 144 K, about 10 times larger than that of CeRhSb. Various experimental results throughout the CeRhX series also vary in the sequence CeRh (Bi-Sb-As). However, the gap observed in CeRhAs is suppressed by external-pressure, suggesting that the chemical and the external pressure seem to cause opposite effects on the size of energy gap in these compounds. These results are compared with those for mixed-valent semiconductors Ce3Pt3Bi4 and Ce3Pt3Sb4.

AB - We have synthesized CeRhBi and CeRhAs and found that these compounds crystallize in the ε-TiNiSi-type structure. It is found that CeRhBi is a heavy-fermion compound, whereas CeRhAs is a mixed-valent semiconductor with an energy gap of 144 K, about 10 times larger than that of CeRhSb. Various experimental results throughout the CeRhX series also vary in the sequence CeRh (Bi-Sb-As). However, the gap observed in CeRhAs is suppressed by external-pressure, suggesting that the chemical and the external pressure seem to cause opposite effects on the size of energy gap in these compounds. These results are compared with those for mixed-valent semiconductors Ce3Pt3Bi4 and Ce3Pt3Sb4.

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Effect of pressure on the size of energy gap in semiconducting mixed-valent rare-earth compounds

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