Effect of Pressure on the Electrical Resistivity of Co/Cu Magnetic Multilayers

T. Sakai, H. Miyagawa, G. Oomi, K. Takanashi, K. Saito, H. Fujimori

Research output: Contribution to journalArticlepeer-review


In the present work we report the effect of pressure on the temperature dependent electrical resistivity p(T) of three Co/Cu magnetic multilayers (MML) having different Cu layer thickness, tCu. Two are antiferromagnetic (AF) and one is ferromagnetic (F). It is found that at room temperature the electrical resistivity, p, of F sample decreases largely by applying pressure compared with that of AF samples; 8 % and 4 % decrease at 2.2 GPa for F and AF samples, respectively. At low temperatures MMLs show a large residual resistivity p0 reflecting much existence of magnetic and structural disorders in the sample, which decreases largely with increasing pressure having pressure coefficient −2.3 × 10−2 GPa. Furthermore, the value of the coefficient of a T2-term of p(T), A, is decreased by applying pressure and its decreasing rate, ∂lnA/∂P, of Co/Cu MML with AF state is much larger than that with F state. It is suggested that the s-d interband scattering of conduction electrons due to local spin disorder in Co/Cu MML with AF state is more sensitive to pressure than that in Co/Cu with F state.

Original languageEnglish
Pages (from-to)644-646
Number of pages3
JournalReview of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu
Publication statusPublished - 1998


  • Co/Cu magnetic multilayer
  • Disorder
  • Electrical resistivity
  • High pressure
  • Spin-wave

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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