Effect of pressure on the electrical resistivity of CeZn3P 3

A. Yamada, N. Hara, K. Matsubayashi, K. Munakata, C. Ganguli, A. Ochiai, T. Matsumoto, Y. Uwatoko

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Abstract

We have measured the electrical resistivity of CeZn3P 3 single crystals under pressure up to 19 GPa for temperature down to 0.4 K. At ambient pressure, the electrical resistivity shows a semiconducting behavior with an energy gap Eg ∼ 1800 K. We have found that the Eg monotonically decreases with increasing pressure, and possibly disappears at around 20 GPa.

Original languageEnglish
Article number012031
JournalJournal of Physics: Conference Series
Volume215
DOIs
Publication statusPublished - 2010 May 11

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Yamada, A., Hara, N., Matsubayashi, K., Munakata, K., Ganguli, C., Ochiai, A., Matsumoto, T., & Uwatoko, Y. (2010). Effect of pressure on the electrical resistivity of CeZn3P 3. Journal of Physics: Conference Series, 215, [012031]. https://doi.org/10.1088/1742-6596/215/1/012031