Effect of Pressure on Microstructure of -Oriented β-SiC Films: Research via Electron Backscatter Diffraction

Song Zhang; Qingfang Xu; Qingyun Sun; Peipei Zhu; Rong Tu; Zhiying Hu; Mingxu Han; Takashi Goto; Lianmeng Zhang; Jiasheng Yan; Shusen Li

doi:10.1111/jace.13823

Effect of Pressure on Microstructure of -Oriented β-SiC Films: Research via Electron Backscatter Diffraction

Song Zhang, Qingfang Xu, Qingyun Sun, Peipei Zhu, Rong Tu, Zhiying Hu, Mingxu Han, Takashi Goto, Lianmeng Zhang, Jiasheng Yan, Shusen Li

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Scanning electron microscopy (SEM) and high-resolution electron backscatter diffraction (EBSD) has been employed to study the microstructure development of -oriented β-SiC films prepared by laser chemical vapor deposition (LCVD) with various total pressure (P_tot). The Surface morphology of films evolved from pyramids with sixfold symmetry to needlelike structure by increasing the P_tot. The EBSD results indicated that the higher P_tot (800 Pa) led to the lower neighbor-pair misorientation and large in-plane domains in β-SiC films.

Original language	English
Pages (from-to)	3713-3718
Number of pages	6
Journal	Journal of the American Ceramic Society
Volume	98
Issue number	12
DOIs	https://doi.org/10.1111/jace.13823
Publication status	Published - 2015 Dec 1

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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10.1111/jace.13823

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title = "Effect of Pressure on Microstructure of -Oriented β-SiC Films: Research via Electron Backscatter Diffraction",

abstract = "Scanning electron microscopy (SEM) and high-resolution electron backscatter diffraction (EBSD) has been employed to study the microstructure development of -oriented β-SiC films prepared by laser chemical vapor deposition (LCVD) with various total pressure (Ptot). The Surface morphology of films evolved from pyramids with sixfold symmetry to needlelike structure by increasing the Ptot. The EBSD results indicated that the higher Ptot (800 Pa) led to the lower neighbor-pair misorientation and large in-plane domains in β-SiC films.",

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T1 - Effect of Pressure on Microstructure of -Oriented β-SiC Films

T2 - Research via Electron Backscatter Diffraction

AU - Zhang, Song

AU - Xu, Qingfang

AU - Sun, Qingyun

AU - Zhu, Peipei

AU - Tu, Rong

AU - Hu, Zhiying

AU - Han, Mingxu

AU - Goto, Takashi

AU - Zhang, Lianmeng

AU - Yan, Jiasheng

AU - Li, Shusen

PY - 2015/12/1

Y1 - 2015/12/1

N2 - Scanning electron microscopy (SEM) and high-resolution electron backscatter diffraction (EBSD) has been employed to study the microstructure development of -oriented β-SiC films prepared by laser chemical vapor deposition (LCVD) with various total pressure (Ptot). The Surface morphology of films evolved from pyramids with sixfold symmetry to needlelike structure by increasing the Ptot. The EBSD results indicated that the higher Ptot (800 Pa) led to the lower neighbor-pair misorientation and large in-plane domains in β-SiC films.

AB - Scanning electron microscopy (SEM) and high-resolution electron backscatter diffraction (EBSD) has been employed to study the microstructure development of -oriented β-SiC films prepared by laser chemical vapor deposition (LCVD) with various total pressure (Ptot). The Surface morphology of films evolved from pyramids with sixfold symmetry to needlelike structure by increasing the Ptot. The EBSD results indicated that the higher Ptot (800 Pa) led to the lower neighbor-pair misorientation and large in-plane domains in β-SiC films.

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Effect of Pressure on Microstructure of -Oriented β-SiC Films: Research via Electron Backscatter Diffraction

Abstract

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