Effect of Pressure on Microstructure of -Oriented β-SiC Films: Research via Electron Backscatter Diffraction

Song Zhang, Qingfang Xu, Qingyun Sun, Peipei Zhu, Rong Tu, Zhiying Hu, Mingxu Han, Takashi Goto, Lianmeng Zhang, Jiasheng Yan, Shusen Li

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Scanning electron microscopy (SEM) and high-resolution electron backscatter diffraction (EBSD) has been employed to study the microstructure development of -oriented β-SiC films prepared by laser chemical vapor deposition (LCVD) with various total pressure (Ptot). The Surface morphology of films evolved from pyramids with sixfold symmetry to needlelike structure by increasing the Ptot. The EBSD results indicated that the higher Ptot (800 Pa) led to the lower neighbor-pair misorientation and large in-plane domains in β-SiC films.

Original languageEnglish
Pages (from-to)3713-3718
Number of pages6
JournalJournal of the American Ceramic Society
Volume98
Issue number12
DOIs
Publication statusPublished - 2015 Dec 1

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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