It is found from X-ray photoelectron spectroscopy study on the chemical structure of silicon dioxide, whose thickness is in the range of 1.2 nm to 8.6 nm, that the oxidation-induced chemical shift depends mainly on the distance, and that 0.4- and 0.6-nm-thick preoxide, which is formed in dry oxygen at 300 °C, modifies the structure of oxide near the surface.
|Title of host publication||Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers|
|Place of Publication||Minato-ku, Japan|
|Number of pages||4|
|Publication status||Published - 1995 Jan|
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