Abstract
Highly c-axis-oriented SmBa2Cu3O7−x (SmBCO) epitaxial films were deposited on (100)-LaAlO3 (LAO) single crystal substrates by metal-organic chemical vapor deposition using Sm(dpm)3, Ba(dmp)2/Ba(tmod)2 and Cu(dpm)2 as precursors. The effect of the precursors’ ratio on the crystalline phases, composition and microstructure of films were investigated. The highly c-axis-oriented SmBCO films with stoichiometry were obtained at the precursors’ molar ratio at Sm: Ba: Cu = 1: 5.12–5.54: 2.16–2.82, with the in-plane epitaxial orientation relationship of SmBCO[100] // LAO[010] and SmBCO[010] // LAO[001].
Original language | English |
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Pages (from-to) | S488-S492 |
Journal | Ceramics International |
Volume | 43 |
DOIs | |
Publication status | Published - 2017 Aug |
Keywords
- Epitaxial growth
- MOCVD
- SmBCO film
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry