Effect of precursors’ ratio on c-axis-oriented SmBCO film by MOCVD

Ting Wang, Song Zhang, Meijun Yang, Rong Tu, Takashi Goto, Lianmeng Zhang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Highly c-axis-oriented SmBa2Cu3O7−x (SmBCO) epitaxial films were deposited on (100)-LaAlO3 (LAO) single crystal substrates by metal-organic chemical vapor deposition using Sm(dpm)3, Ba(dmp)2/Ba(tmod)2 and Cu(dpm)2 as precursors. The effect of the precursors’ ratio on the crystalline phases, composition and microstructure of films were investigated. The highly c-axis-oriented SmBCO films with stoichiometry were obtained at the precursors’ molar ratio at Sm: Ba: Cu = 1: 5.12–5.54: 2.16–2.82, with the in-plane epitaxial orientation relationship of SmBCO[100] // LAO[010] and SmBCO[010] // LAO[001].

Original languageEnglish
Pages (from-to)S488-S492
JournalCeramics International
Volume43
DOIs
Publication statusPublished - 2017 Aug

Keywords

  • Epitaxial growth
  • MOCVD
  • SmBCO film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

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