Effect of phase purity on dislocation density of pressurized-reactor metalorganic vapor phase epitaxy grown InN

The effect of the metastable zincblende (ZB) InN inclusion in the stable wurtzite (WZ) InN on the threading dislocation densities (TDDs) of an InN film grown by pressurized-reactor metalorganic vapor phase epitaxy has been studied by X-ray diffraction measurements. InN films are directly grown on c-plane sapphire substrates with nitrided surfaces at 1600 Torr with the different growth temperature from 500 to 700 °C. Films including ZB-InN show the correlation between the ZB volume fraction and the edge component of TDDs, not the screw component of TDDs. This result can be crystallographically understood by a simple model explaining how the ZB structure is included, i.e., ZB domains existing side-by-side with WZ domains and twined ZB domains. This can be clearly observed by electron backscatter diffraction.