Effect of passivation film stress on shift in threshold voltage of GaAs FETs

H. Miura, K. Ohshika, H. Masuda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

GaAs FETs are widely used for high-speed and low-power devices, especially in optical communication systems. To improve product reliability, it is very important to control mechanical stress in device structures. This is because the stress field changes the dopant distribution and shifts electronic characteristic of devices due to piezoelectric effect. There are several stress development processes in the device manufacturing, such as thermal stress due to mismatch in thermal expansion coefficients among thin film materials used in the device structure and intrinsic stress which occurs during film deposition. To evaluate precise stress fields in actual device structures, the authors have developed stress simulation methods based on finite element analysis, a measurement method for mechanical properties of thin films, and a microscopic stress measurement method. To improve product reliability of silicon devices, it is confirmed that these methods are effective for control or optimization of mechanical stress fields in the device structure. In this paper, the stress evaluation methods are applied to discuss the effect of passivation film stress on the shift in threshold voltage of GaAs FETs.

Original languageEnglish
Title of host publication1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages49-50
Number of pages2
ISBN (Electronic)0780327454
DOIs
Publication statusPublished - 1996 Jan 1
Externally publishedYes
Event1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996 - Tokyo, Japan
Duration: 1996 Sep 21996 Sep 4

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996
CountryJapan
CityTokyo
Period96/9/296/9/4

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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