Effect of ozone radical treatment for high-performance poly-Si TFTs

Tatsuaki Hirata; Shin Ichiro Kuroki; Masayuki Yamano; Tadashi Sato; Koji Kotani; Takamaro Kikkawa

doi:10.1109/AM-FPD.2014.6867167

Effect of ozone radical treatment for high-performance poly-Si TFTs

Tatsuaki Hirata, Shin Ichiro Kuroki, Masayuki Yamano, Tadashi Sato, Koji Kotani, Takamaro Kikkawa

ENG - Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High-performance low-temperature poly-Si thin film transistor (LTPS-TFT) with one-dimensionally elongated long crystal grains have been developed. In the LTPS TFTs, the carrier mobility is enhanced, however the off-leakage current also increase. This is because, grain boundary become longer, and bridge the distance between source and drain, and the grain boundary bridge become a current-leakage path. In this paper, we suggest a novel ozone radical treatment for reducing the off-leakage current.

Original language	English
Title of host publication	Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	IEEE Computer Society
Pages	189-192
Number of pages	4
ISBN (Print)	9784863483958
DOIs	https://doi.org/10.1109/AM-FPD.2014.6867167
Publication status	Published - 2014 Jan 1
Event	21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto, Japan Duration: 2014 Jul 2 → 2014 Jul 4

Publication series

Name	Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other	21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
Country	Japan
City	Kyoto
Period	14/7/2 → 14/7/4

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/AM-FPD.2014.6867167

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Hirata, T., Kuroki, S. I., Yamano, M., Sato, T., Kotani, K., & Kikkawa, T. (2014). Effect of ozone radical treatment for high-performance poly-Si TFTs. In Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 189-192). [6867167] (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). IEEE Computer Society. https://doi.org/10.1109/AM-FPD.2014.6867167

Effect of ozone radical treatment for high-performance poly-Si TFTs. / Hirata, Tatsuaki; Kuroki, Shin Ichiro; Yamano, Masayuki; Sato, Tadashi; Kotani, Koji; Kikkawa, Takamaro.

Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society, 2014. p. 189-192 6867167 (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hirata, T, Kuroki, SI, Yamano, M, Sato, T, Kotani, K & Kikkawa, T 2014, Effect of ozone radical treatment for high-performance poly-Si TFTs. in Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 6867167, Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, IEEE Computer Society, pp. 189-192, 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014, Kyoto, Japan, 14/7/2. https://doi.org/10.1109/AM-FPD.2014.6867167

Hirata T, Kuroki SI, Yamano M, Sato T, Kotani K, Kikkawa T. Effect of ozone radical treatment for high-performance poly-Si TFTs. In Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society. 2014. p. 189-192. 6867167. (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). https://doi.org/10.1109/AM-FPD.2014.6867167

Hirata, Tatsuaki ; Kuroki, Shin Ichiro ; Yamano, Masayuki ; Sato, Tadashi ; Kotani, Koji ; Kikkawa, Takamaro. / Effect of ozone radical treatment for high-performance poly-Si TFTs. Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society, 2014. pp. 189-192 (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

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abstract = "High-performance low-temperature poly-Si thin film transistor (LTPS-TFT) with one-dimensionally elongated long crystal grains have been developed. In the LTPS TFTs, the carrier mobility is enhanced, however the off-leakage current also increase. This is because, grain boundary become longer, and bridge the distance between source and drain, and the grain boundary bridge become a current-leakage path. In this paper, we suggest a novel ozone radical treatment for reducing the off-leakage current.",

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