TY - GEN
T1 - Effect of ozone radical treatment for high-performance poly-Si TFTs
AU - Hirata, Tatsuaki
AU - Kuroki, Shin Ichiro
AU - Yamano, Masayuki
AU - Sato, Tadashi
AU - Kotani, Koji
AU - Kikkawa, Takamaro
PY - 2014/1/1
Y1 - 2014/1/1
N2 - High-performance low-temperature poly-Si thin film transistor (LTPS-TFT) with one-dimensionally elongated long crystal grains have been developed. In the LTPS TFTs, the carrier mobility is enhanced, however the off-leakage current also increase. This is because, grain boundary become longer, and bridge the distance between source and drain, and the grain boundary bridge become a current-leakage path. In this paper, we suggest a novel ozone radical treatment for reducing the off-leakage current.
AB - High-performance low-temperature poly-Si thin film transistor (LTPS-TFT) with one-dimensionally elongated long crystal grains have been developed. In the LTPS TFTs, the carrier mobility is enhanced, however the off-leakage current also increase. This is because, grain boundary become longer, and bridge the distance between source and drain, and the grain boundary bridge become a current-leakage path. In this paper, we suggest a novel ozone radical treatment for reducing the off-leakage current.
UR - http://www.scopus.com/inward/record.url?scp=84906253478&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906253478&partnerID=8YFLogxK
U2 - 10.1109/AM-FPD.2014.6867167
DO - 10.1109/AM-FPD.2014.6867167
M3 - Conference contribution
AN - SCOPUS:84906253478
SN - 9784863483958
T3 - Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials
SP - 189
EP - 192
BT - Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - IEEE Computer Society
T2 - 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
Y2 - 2 July 2014 through 4 July 2014
ER -