Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC

Takashi Goto; Hisashi Homma; Toshio Hirai

doi:10.1016/S0010-938X(01)00066-X

Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC

Takashi Goto, Hisashi Homma, Toshio Hirai

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

The oxidation behavior of chemically vapor-deposited silicon carbide (CVD SiC) was studied at 1670-2010 K in O₂-Ar and CO₂-Ar. The oxidation kinetics in O₂-Ar was parabolic or linear parabolic, and was parabolic in C0₂-Ar. The activation energy for the parabolic rate constants (k_p) was 210-220 kJ/mol in O₂-Ar, and was 290-300 kJ/mol in CO₂-Ar. The oxygen partial pressure (P_O2) dependence of k_p was expressed as k_p α (P_O2)ⁿ, where n = 0.08-0.13 and 0.37-0.53 in O₂-Ar and CO₂-Ar, respectively. Bubbles were formed at more than 1985 K and P_O2 > 5 kPa. The bubble formation temperature decreased with decreasing P_O2 at P_O2 < 5 kPa.

Original language	English
Pages (from-to)	359-370
Number of pages	12
Journal	Corrosion Science
Volume	44
Issue number	2
DOIs	https://doi.org/10.1016/S0010-938X(01)00066-X
Publication status	Published - 2002 Feb
Externally published	Yes

Keywords

Bubbles
CO gas
Chemical vapor deposition
Linear parabolic
Parabolic
Silicon carbide

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Materials Science(all)

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10.1016/S0010-938X(01)00066-X

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title = "Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC",

abstract = "The oxidation behavior of chemically vapor-deposited silicon carbide (CVD SiC) was studied at 1670-2010 K in O2-Ar and CO2-Ar. The oxidation kinetics in O2-Ar was parabolic or linear parabolic, and was parabolic in C02-Ar. The activation energy for the parabolic rate constants (kp) was 210-220 kJ/mol in O2-Ar, and was 290-300 kJ/mol in CO2-Ar. The oxygen partial pressure (PO2) dependence of kp was expressed as kp α (PO2)n, where n = 0.08-0.13 and 0.37-0.53 in O2-Ar and CO2-Ar, respectively. Bubbles were formed at more than 1985 K and PO2 > 5 kPa. The bubble formation temperature decreased with decreasing PO2 at PO2 < 5 kPa.",

keywords = "Bubbles, CO gas, Chemical vapor deposition, Linear parabolic, Parabolic, Silicon carbide",

author = "Takashi Goto and Hisashi Homma and Toshio Hirai",

note = "Funding Information: The oxidation experiments were carried out at the Laboratory of High Temperature Materials Science and Engineering, Institute for Material Research, Tohoku University. This research was partly supported by the Grant-in-Aid for Exploratory Research from the Ministry of Education, Science, Sports and Culture under contract no. 12875119.",

year = "2002",

month = feb,

doi = "10.1016/S0010-938X(01)00066-X",

language = "English",

volume = "44",

pages = "359--370",

journal = "Corrosion Science",

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T1 - Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC

AU - Goto, Takashi

AU - Homma, Hisashi

AU - Hirai, Toshio

N1 - Funding Information: The oxidation experiments were carried out at the Laboratory of High Temperature Materials Science and Engineering, Institute for Material Research, Tohoku University. This research was partly supported by the Grant-in-Aid for Exploratory Research from the Ministry of Education, Science, Sports and Culture under contract no. 12875119.

PY - 2002/2

Y1 - 2002/2

N2 - The oxidation behavior of chemically vapor-deposited silicon carbide (CVD SiC) was studied at 1670-2010 K in O2-Ar and CO2-Ar. The oxidation kinetics in O2-Ar was parabolic or linear parabolic, and was parabolic in C02-Ar. The activation energy for the parabolic rate constants (kp) was 210-220 kJ/mol in O2-Ar, and was 290-300 kJ/mol in CO2-Ar. The oxygen partial pressure (PO2) dependence of kp was expressed as kp α (PO2)n, where n = 0.08-0.13 and 0.37-0.53 in O2-Ar and CO2-Ar, respectively. Bubbles were formed at more than 1985 K and PO2 > 5 kPa. The bubble formation temperature decreased with decreasing PO2 at PO2 < 5 kPa.

AB - The oxidation behavior of chemically vapor-deposited silicon carbide (CVD SiC) was studied at 1670-2010 K in O2-Ar and CO2-Ar. The oxidation kinetics in O2-Ar was parabolic or linear parabolic, and was parabolic in C02-Ar. The activation energy for the parabolic rate constants (kp) was 210-220 kJ/mol in O2-Ar, and was 290-300 kJ/mol in CO2-Ar. The oxygen partial pressure (PO2) dependence of kp was expressed as kp α (PO2)n, where n = 0.08-0.13 and 0.37-0.53 in O2-Ar and CO2-Ar, respectively. Bubbles were formed at more than 1985 K and PO2 > 5 kPa. The bubble formation temperature decreased with decreasing PO2 at PO2 < 5 kPa.

KW - Bubbles

KW - CO gas

KW - Chemical vapor deposition

KW - Linear parabolic

KW - Parabolic

KW - Silicon carbide

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DO - 10.1016/S0010-938X(01)00066-X

M3 - Article

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VL - 44

SP - 359

EP - 370

JO - Corrosion Science

JF - Corrosion Science

SN - 0010-938X

IS - 2

ER -

Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC

Abstract

Keywords

ASJC Scopus subject areas

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