Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC

Takashi Goto, Hisashi Homma, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

The oxidation behavior of chemically vapor-deposited silicon carbide (CVD SiC) was studied at 1670-2010 K in O2-Ar and CO2-Ar. The oxidation kinetics in O2-Ar was parabolic or linear parabolic, and was parabolic in C02-Ar. The activation energy for the parabolic rate constants (kp) was 210-220 kJ/mol in O2-Ar, and was 290-300 kJ/mol in CO2-Ar. The oxygen partial pressure (PO2) dependence of kp was expressed as kp α (PO2)n, where n = 0.08-0.13 and 0.37-0.53 in O2-Ar and CO2-Ar, respectively. Bubbles were formed at more than 1985 K and PO2 > 5 kPa. The bubble formation temperature decreased with decreasing PO2 at PO2 < 5 kPa.

Original languageEnglish
Pages (from-to)359-370
Number of pages12
JournalCorrosion Science
Volume44
Issue number2
DOIs
Publication statusPublished - 2002 Feb

Keywords

  • Bubbles
  • CO gas
  • Chemical vapor deposition
  • Linear parabolic
  • Parabolic
  • Silicon carbide

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Science(all)

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