Effect of oxygen impurity on nitrogen radicals in post-discharge flows

Y. Shiba, Akinobu Teramoto, Tomoyuki Suwa, K. Watanabe, S. Nishimura, Yasuyuki Shirai, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Because oxygen impurity in the silicon nitride film deteriorate the quality of the nitride film it is important to research the behavior of oxidizing species during the nitride formation process. We investigate the effect of oxygen molecules in the ground state on nitrogen radicals in post-discharge flows using ultra clean gas supply technology. Although oxygen atoms are not only excited directly by the discharge process, but the N2O and O3 are also generated in the gas. The nitrogen radicals in mixture gas of O2 and nitrogen radical easily excite the oxygen molecules and they become oxidizing species. As a result, the nitrogen radicals are inactive, and then oxygen impurity must be reduced in the process using nitrogen radicals.

Original languageEnglish
Title of host publicationGeneral Student Poster Session
EditorsV. Chaitanya, K. B. Sundaram, V. Subramanian, P. Pharkya
PublisherElectrochemical Society Inc.
Pages1-9
Number of pages9
Edition39
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015 Jan 1
EventSymposium on General Student Poster Session - 228th ECS Meeting - Phoenix, United States
Duration: 2015 Oct 112015 Oct 15

Publication series

NameECS Transactions
Number39
Volume69
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on General Student Poster Session - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period15/10/1115/10/15

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Shiba, Y., Teramoto, A., Suwa, T., Watanabe, K., Nishimura, S., Shirai, Y., & Sugawa, S. (2015). Effect of oxygen impurity on nitrogen radicals in post-discharge flows. In V. Chaitanya, K. B. Sundaram, V. Subramanian, & P. Pharkya (Eds.), General Student Poster Session (39 ed., pp. 1-9). (ECS Transactions; Vol. 69, No. 39). Electrochemical Society Inc.. https://doi.org/10.1149/06939.0001ecst