Effect of oxygen gas addition on preparation of iridium and platinum films by metal-organic chemical vapor deposition

Takashi Goto, J. Roberto Vargas, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

The effect of oxygen gas addition on deposition rates, composition and microstructure was investigated in preparing Ir and Pt films by metal-organic chemical vapor deposition using Ir- and Pt-acetylacetonate precursors. Without the addition of oxygen gas, 20 mass% of carbon at most was contained in the films. The carbon was amorphous, surrounding metal particles of several nanometers in diameter. The addition of oxygen gas is effective in obtaining carbon-free Ir and Pt films, and the films grow epitaxially on MgO and sapphire single crystal substrates.

Original languageEnglish
Pages (from-to)209-213
Number of pages5
JournalMaterials Transactions, JIM
Volume40
Issue number3
DOIs
Publication statusPublished - 1999 Mar

Keywords

  • Epitaxial growth
  • Indium film
  • Metal-organic chemical vapor deposition
  • Oxygen gas addition
  • Platinum film

ASJC Scopus subject areas

  • Engineering(all)

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