Effect of oxygen gas addition on preparation of iridium and platinum films by metal-organic chemical vapor deposition

Takashi Goto; J. Roberto Vargas; Toshio Hirai

doi:10.2320/matertrans1989.40.209

Effect of oxygen gas addition on preparation of iridium and platinum films by metal-organic chemical vapor deposition

Takashi Goto, J. Roberto Vargas, Toshio Hirai

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The effect of oxygen gas addition on deposition rates, composition and microstructure was investigated in preparing Ir and Pt films by metal-organic chemical vapor deposition using Ir- and Pt-acetylacetonate precursors. Without the addition of oxygen gas, 20 mass% of carbon at most was contained in the films. The carbon was amorphous, surrounding metal particles of several nanometers in diameter. The addition of oxygen gas is effective in obtaining carbon-free Ir and Pt films, and the films grow epitaxially on MgO and sapphire single crystal substrates.

Original language	English
Pages (from-to)	209-213
Number of pages	5
Journal	Materials Transactions, JIM
Volume	40
Issue number	3
DOIs	https://doi.org/10.2320/matertrans1989.40.209
Publication status	Published - 1999 Mar

Keywords

Epitaxial growth
Indium film
Metal-organic chemical vapor deposition
Oxygen gas addition
Platinum film

ASJC Scopus subject areas

Engineering(all)

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abstract = "The effect of oxygen gas addition on deposition rates, composition and microstructure was investigated in preparing Ir and Pt films by metal-organic chemical vapor deposition using Ir- and Pt-acetylacetonate precursors. Without the addition of oxygen gas, 20 mass% of carbon at most was contained in the films. The carbon was amorphous, surrounding metal particles of several nanometers in diameter. The addition of oxygen gas is effective in obtaining carbon-free Ir and Pt films, and the films grow epitaxially on MgO and sapphire single crystal substrates.",

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AU - Goto, Takashi

AU - Vargas, J. Roberto

AU - Hirai, Toshio

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Y1 - 1999/3

N2 - The effect of oxygen gas addition on deposition rates, composition and microstructure was investigated in preparing Ir and Pt films by metal-organic chemical vapor deposition using Ir- and Pt-acetylacetonate precursors. Without the addition of oxygen gas, 20 mass% of carbon at most was contained in the films. The carbon was amorphous, surrounding metal particles of several nanometers in diameter. The addition of oxygen gas is effective in obtaining carbon-free Ir and Pt films, and the films grow epitaxially on MgO and sapphire single crystal substrates.

AB - The effect of oxygen gas addition on deposition rates, composition and microstructure was investigated in preparing Ir and Pt films by metal-organic chemical vapor deposition using Ir- and Pt-acetylacetonate precursors. Without the addition of oxygen gas, 20 mass% of carbon at most was contained in the films. The carbon was amorphous, surrounding metal particles of several nanometers in diameter. The addition of oxygen gas is effective in obtaining carbon-free Ir and Pt films, and the films grow epitaxially on MgO and sapphire single crystal substrates.

KW - Epitaxial growth

KW - Indium film

KW - Metal-organic chemical vapor deposition

KW - Oxygen gas addition

KW - Platinum film

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Effect of oxygen gas addition on preparation of iridium and platinum films by metal-organic chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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