Abstract
The effect of oxygen gas addition on deposition rates, composition and microstructure was investigated in preparing Ir and Pt films by metal-organic chemical vapor deposition using Ir- and Pt-acetylacetonate precursors. Without the addition of oxygen gas, 20 mass% of carbon at most was contained in the films. The carbon was amorphous, surrounding metal particles of several nanometers in diameter. The addition of oxygen gas is effective in obtaining carbon-free Ir and Pt films, and the films grow epitaxially on MgO and sapphire single crystal substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 209-213 |
| Number of pages | 5 |
| Journal | Materials Transactions, JIM |
| Volume | 40 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1999 Mar |
Keywords
- Epitaxial growth
- Indium film
- Metal-organic chemical vapor deposition
- Oxygen gas addition
- Platinum film
ASJC Scopus subject areas
- Engineering(all)