We fabricated MOS capacitors consisting of a La2O3 dielectric with small EOT of 0.59 nm and a W electrode. By supplying oxygen during La2O3 deposition, La-silicate was formed at La 2O3/Si interface. The La2O3 and La-silicate dielectric constant was 23.4 and 14.4, respectively. The depth of the trap potential well was small, compared to without oxygen. These differences resulted from the quantity of oxygen vacancy. Concerning the variation of annealing, stable capacitance and flat-band voltage were obtained up to 300 °C annealing. However, SiOx based interfacial layer formation was observed above 500 °C annealing. copyright The Electrochemical Society.
|Number of pages||10|
|Publication status||Published - 2006|
|Event||Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico|
Duration: 2006 Oct 29 → 2006 Nov 3
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