Effect of oxygen for ultra-thin la2O3 film deposition

K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Citations (Scopus)

Abstract

We fabricated MOS capacitors consisting of a La2O3 dielectric with small EOT of 0.59 nm and a W electrode. By supplying oxygen during La2O3 deposition, La-silicate was formed at La 2O3/Si interface. The La2O3 and La-silicate dielectric constant was 23.4 and 14.4, respectively. The depth of the trap potential well was small, compared to without oxygen. These differences resulted from the quantity of oxygen vacancy. Concerning the variation of annealing, stable capacitance and flat-band voltage were obtained up to 300 °C annealing. However, SiOx based interfacial layer formation was observed above 500 °C annealing. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Gate Dielectrics 4
PublisherElectrochemical Society Inc.
Pages425-434
Number of pages10
Edition3
ISBN (Electronic)1566775035
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventPhysics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

Publication series

NameECS Transactions
Number3
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherPhysics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting
Country/TerritoryMexico
CityCancun
Period06/10/2906/11/3

ASJC Scopus subject areas

  • Engineering(all)

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