Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction

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Abstract

We investigated the influence of n+-GaAs thickness and doping density of GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel junctions with different n+-GaAs thickness and doping density grown on identical p-AlGaAs/p-GaAs/n-AlGaAs light emitting diode (LED) structures. Electroluminescence (EL) polarization of the surface emission was measured under the Faraday configuration with external magnetic field. All samples have the bias dependence of the EL polarization, and higher EL polarization is obtained in samples in which n+-GaAs is completely depleted at zero bias. The EL polarization is found to be sensitive to the bias condition for both the (Ga,Mn)As/n+-GaAs tunnel junction and the LED structure.

Original languageEnglish
Pages (from-to)438-441
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume32
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2006 May

Keywords

  • (Ga,Mn)As
  • Esaki diode
  • Ferromagnetic semiconductor
  • Spin injection

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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