Effect of nitrogen bonding states on dipole at the HfSiO/SiON interface studied by photoemission spectroscopy

S. Toyoda, H. Kamada, A. Kikuchi, H. Kumigashira, M. Oshima, K. Iwamoto, T. Sukegawa, Z. Liu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We have investigated effect of nitrogen bonding states on dipole at the HfSiO/SiON interface using photoemission spectroscopy with synchrotron radiation. Significant increase in the valence-band discontinuity between HfSiO films on a Si substrate upon annealing is observed, which can be related to changes in the interface dipole. Chemical states and in-depth profiles analyses suggest diffusion of nitrogen atoms from the HfSiO/SiON interface to the substrate during annealing processes. It is found that the formation of the interface dipole strongly depends on the nitrogen bonding states and their distributions at the HfSiO/SiON interface.

Original languageEnglish
Article number124103
JournalJournal of Applied Physics
Volume107
Issue number12
DOIs
Publication statusPublished - 2010 Jun 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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