Effect of nitrogen bonding states on dipole at the HfSiO/SiON interface studied by photoemission spectroscopy

S. Toyoda; H. Kamada; A. Kikuchi; H. Kumigashira; M. Oshima; K. Iwamoto; T. Sukegawa; Z. Liu

doi:10.1063/1.3449077

Effect of nitrogen bonding states on dipole at the HfSiO/SiON interface studied by photoemission spectroscopy

S. Toyoda, H. Kamada, A. Kikuchi, H. Kumigashira, M. Oshima, K. Iwamoto, T. Sukegawa, Z. Liu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have investigated effect of nitrogen bonding states on dipole at the HfSiO/SiON interface using photoemission spectroscopy with synchrotron radiation. Significant increase in the valence-band discontinuity between HfSiO films on a Si substrate upon annealing is observed, which can be related to changes in the interface dipole. Chemical states and in-depth profiles analyses suggest diffusion of nitrogen atoms from the HfSiO/SiON interface to the substrate during annealing processes. It is found that the formation of the interface dipole strongly depends on the nitrogen bonding states and their distributions at the HfSiO/SiON interface.

Original language	English
Article number	124103
Journal	Journal of Applied Physics
Volume	107
Issue number	12
DOIs	https://doi.org/10.1063/1.3449077
Publication status	Published - 2010 Jun 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Effect of nitrogen bonding states on dipole at the HfSiO/SiON interface studied by photoemission spectroscopy",

abstract = "We have investigated effect of nitrogen bonding states on dipole at the HfSiO/SiON interface using photoemission spectroscopy with synchrotron radiation. Significant increase in the valence-band discontinuity between HfSiO films on a Si substrate upon annealing is observed, which can be related to changes in the interface dipole. Chemical states and in-depth profiles analyses suggest diffusion of nitrogen atoms from the HfSiO/SiON interface to the substrate during annealing processes. It is found that the formation of the interface dipole strongly depends on the nitrogen bonding states and their distributions at the HfSiO/SiON interface.",

author = "S. Toyoda and H. Kamada and A. Kikuchi and H. Kumigashira and M. Oshima and K. Iwamoto and T. Sukegawa and Z. Liu",

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T1 - Effect of nitrogen bonding states on dipole at the HfSiO/SiON interface studied by photoemission spectroscopy

AU - Toyoda, S.

AU - Kamada, H.

AU - Kikuchi, A.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Iwamoto, K.

AU - Sukegawa, T.

AU - Liu, Z.

PY - 2010/6/15

Y1 - 2010/6/15

N2 - We have investigated effect of nitrogen bonding states on dipole at the HfSiO/SiON interface using photoemission spectroscopy with synchrotron radiation. Significant increase in the valence-band discontinuity between HfSiO films on a Si substrate upon annealing is observed, which can be related to changes in the interface dipole. Chemical states and in-depth profiles analyses suggest diffusion of nitrogen atoms from the HfSiO/SiON interface to the substrate during annealing processes. It is found that the formation of the interface dipole strongly depends on the nitrogen bonding states and their distributions at the HfSiO/SiON interface.

AB - We have investigated effect of nitrogen bonding states on dipole at the HfSiO/SiON interface using photoemission spectroscopy with synchrotron radiation. Significant increase in the valence-band discontinuity between HfSiO films on a Si substrate upon annealing is observed, which can be related to changes in the interface dipole. Chemical states and in-depth profiles analyses suggest diffusion of nitrogen atoms from the HfSiO/SiON interface to the substrate during annealing processes. It is found that the formation of the interface dipole strongly depends on the nitrogen bonding states and their distributions at the HfSiO/SiON interface.

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