Effect of nitridation on indium-composition of InGaN films

Jung Hun Choi, Suresh Kumar, Shi Yang Ji, Shojiki Kanako, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The present study aims to understand the relation between the nitridation and indium-composition of InGaN grown on sapphire substrate using the metalorganic vapor phase epitaxy through X-ray diffraction reciprocal space mapping measurements. In-composition of InGaN on nitrided sapphire substrate increased to 13% which is higher than the sample without nitridation with 7%. Also, flat surface was observed in the nitrided sample. Two times larger in-plane strain was induced at the nitired sample. InGaN grown on low-temperature GaN buffer, however, did not show clear effect of nitridation. The two investigated samples showed similar Indium composition, surface flatness, and in-plane strain with and without nitridation. Differences of indium incorporation and relaxation of in-plane strain were attributed to the effect of AIN formed by nitridation process.

Original languageEnglish
Title of host publicationMaterials Integration
PublisherTrans Tech Publications Ltd
Pages193-198
Number of pages6
ISBN (Print)9783037853764
DOIs
Publication statusPublished - 2012 Jan 1
EventInt. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011 - Sendai, Japan
Duration: 2011 Dec 12011 Dec 2

Publication series

NameKey Engineering Materials
Volume508
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Other

OtherInt. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011
CountryJapan
CitySendai
Period11/12/111/12/2

Keywords

  • In-composition
  • InGaN
  • Nitridation
  • Reciprocal space mapping

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Choi, J. H., Kumar, S., Ji, S. Y., Kanako, S., Hanada, T., Katayama, R., & Matsuoka, T. (2012). Effect of nitridation on indium-composition of InGaN films. In Materials Integration (pp. 193-198). (Key Engineering Materials; Vol. 508). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.508.193