TY - GEN
T1 - Effect of nitridation on indium-composition of InGaN films
AU - Choi, Jung Hun
AU - Kumar, Suresh
AU - Ji, Shi Yang
AU - Kanako, Shojiki
AU - Hanada, Takashi
AU - Katayama, Ryuji
AU - Matsuoka, Takashi
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - The present study aims to understand the relation between the nitridation and indium-composition of InGaN grown on sapphire substrate using the metalorganic vapor phase epitaxy through X-ray diffraction reciprocal space mapping measurements. In-composition of InGaN on nitrided sapphire substrate increased to 13% which is higher than the sample without nitridation with 7%. Also, flat surface was observed in the nitrided sample. Two times larger in-plane strain was induced at the nitired sample. InGaN grown on low-temperature GaN buffer, however, did not show clear effect of nitridation. The two investigated samples showed similar Indium composition, surface flatness, and in-plane strain with and without nitridation. Differences of indium incorporation and relaxation of in-plane strain were attributed to the effect of AIN formed by nitridation process.
AB - The present study aims to understand the relation between the nitridation and indium-composition of InGaN grown on sapphire substrate using the metalorganic vapor phase epitaxy through X-ray diffraction reciprocal space mapping measurements. In-composition of InGaN on nitrided sapphire substrate increased to 13% which is higher than the sample without nitridation with 7%. Also, flat surface was observed in the nitrided sample. Two times larger in-plane strain was induced at the nitired sample. InGaN grown on low-temperature GaN buffer, however, did not show clear effect of nitridation. The two investigated samples showed similar Indium composition, surface flatness, and in-plane strain with and without nitridation. Differences of indium incorporation and relaxation of in-plane strain were attributed to the effect of AIN formed by nitridation process.
KW - In-composition
KW - InGaN
KW - Nitridation
KW - Reciprocal space mapping
UR - http://www.scopus.com/inward/record.url?scp=84859702985&partnerID=8YFLogxK
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U2 - 10.4028/www.scientific.net/KEM.508.193
DO - 10.4028/www.scientific.net/KEM.508.193
M3 - Conference contribution
AN - SCOPUS:84859702985
SN - 9783037853764
T3 - Key Engineering Materials
SP - 193
EP - 198
BT - Materials Integration
PB - Trans Tech Publications Ltd
T2 - Int. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011
Y2 - 1 December 2011 through 2 December 2011
ER -