Effect of near atmospheric pressure nitrogen plasma treatment on Pt/ZnO interface

Takahiro Nagata; Yoshiyuki Yamashita; Hideki Yoshikawa; Tsuyoshi Uehara; Masamitsu Haemori; Keisuke Kobayashi; Toyohiro Chikyow

doi:10.1063/1.4768908

Effect of near atmospheric pressure nitrogen plasma treatment on Pt/ZnO interface

Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Tsuyoshi Uehara, Masamitsu Haemori, Keisuke Kobayashi, Toyohiro Chikyow

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effect of near atmospheric pressure nitrogen plasma (NAP) treatment of platinum (Pt)/zinc oxide (ZnO) interface was investigated. NAP can nitride the ZnO surface at even room temperature. Hard x-ray photoelectron spectroscopy revealed that NAP treatment reduced the surface electron accumulation at the ZnO surface and inhibited the Zn diffusion into the Pt electrode, which are critical issues affecting the Schottky barrier height and the ideality factor of the Pt/ZnO structure. After NAP treatment, the Pt Schottky contact indicated an improvement of electrical properties. NAP treatment is effective for the surface passivation and the Schottky contact formation of ZnO.

Original language	English
Article number	116104
Journal	Journal of Applied Physics
Volume	112
Issue number	11
DOIs	https://doi.org/10.1063/1.4768908
Publication status	Published - 2012 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Effect of near atmospheric pressure nitrogen plasma treatment on Pt/ZnO interface",

abstract = "The effect of near atmospheric pressure nitrogen plasma (NAP) treatment of platinum (Pt)/zinc oxide (ZnO) interface was investigated. NAP can nitride the ZnO surface at even room temperature. Hard x-ray photoelectron spectroscopy revealed that NAP treatment reduced the surface electron accumulation at the ZnO surface and inhibited the Zn diffusion into the Pt electrode, which are critical issues affecting the Schottky barrier height and the ideality factor of the Pt/ZnO structure. After NAP treatment, the Pt Schottky contact indicated an improvement of electrical properties. NAP treatment is effective for the surface passivation and the Schottky contact formation of ZnO.",

author = "Takahiro Nagata and Yoshiyuki Yamashita and Hideki Yoshikawa and Tsuyoshi Uehara and Masamitsu Haemori and Keisuke Kobayashi and Toyohiro Chikyow",

note = "Funding Information: We are grateful to HiSOR, Hiroshima University, and JAEA/SPring-8 for the development of HX-PES at BL15XU in SPring-8. The HX-PES measurements were performed under the approval of the Synchrotron X-ray Station at SPring-8 (Proposal Nos. 2009B 4601 and 2010A 4604). This work was supported by the World Premier International Research Center Initiative (WPI), MEXT, Japan. ",

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T1 - Effect of near atmospheric pressure nitrogen plasma treatment on Pt/ZnO interface

AU - Nagata, Takahiro

AU - Yamashita, Yoshiyuki

AU - Yoshikawa, Hideki

AU - Uehara, Tsuyoshi

AU - Haemori, Masamitsu

AU - Kobayashi, Keisuke

AU - Chikyow, Toyohiro

N1 - Funding Information: We are grateful to HiSOR, Hiroshima University, and JAEA/SPring-8 for the development of HX-PES at BL15XU in SPring-8. The HX-PES measurements were performed under the approval of the Synchrotron X-ray Station at SPring-8 (Proposal Nos. 2009B 4601 and 2010A 4604). This work was supported by the World Premier International Research Center Initiative (WPI), MEXT, Japan.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - The effect of near atmospheric pressure nitrogen plasma (NAP) treatment of platinum (Pt)/zinc oxide (ZnO) interface was investigated. NAP can nitride the ZnO surface at even room temperature. Hard x-ray photoelectron spectroscopy revealed that NAP treatment reduced the surface electron accumulation at the ZnO surface and inhibited the Zn diffusion into the Pt electrode, which are critical issues affecting the Schottky barrier height and the ideality factor of the Pt/ZnO structure. After NAP treatment, the Pt Schottky contact indicated an improvement of electrical properties. NAP treatment is effective for the surface passivation and the Schottky contact formation of ZnO.

AB - The effect of near atmospheric pressure nitrogen plasma (NAP) treatment of platinum (Pt)/zinc oxide (ZnO) interface was investigated. NAP can nitride the ZnO surface at even room temperature. Hard x-ray photoelectron spectroscopy revealed that NAP treatment reduced the surface electron accumulation at the ZnO surface and inhibited the Zn diffusion into the Pt electrode, which are critical issues affecting the Schottky barrier height and the ideality factor of the Pt/ZnO structure. After NAP treatment, the Pt Schottky contact indicated an improvement of electrical properties. NAP treatment is effective for the surface passivation and the Schottky contact formation of ZnO.

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