Effect of n incorporation on growth behavior of InGaAsN/GaAs/Ge multi-layered structure by MOVPE

Pornsiri Wanarattikan, Sakuntam Sanorpim, Somyod Denchitcharoen, Kenjiro Uesugi, Takehiko Kikuchi, Shigeyuki Kuboya, Kentaro Onabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have investigated an effect of N incorporation on InGaAsN on Ge (001), which is proposed to be a part of the InGaP(N)/InGaAs/InGaAsN/Ge four-junction solar cell, and on its growth behavior. Results obtained from high resolution X-ray diffraction and Raman scattering demonstrated that high quality In0.11Ga0.89As1-yNy films with N (y) contents up to 5% were successfully grown on n-type doped Ge (001) substrate by metalorganic vapor phase epitaxy using low-temperature (500°C) GaAs buffer layer. As expectation, the In0.11Ga0.89As0.96N0.04 film is examined to be under lattice-matching condition. Anti-phase domains were observed for the film without N incorporation, which exhibits submicron-size domains oriented along the [110] direction on the grown surface. With increasing N content, the domains become less orientation, and present in a larger domain size. Based on results of transmission electron microscopy, a high density of anti-phase domains was clearly observed at the interface of low-temperature GaAs buffer layer and Ge substrate. On the other hand, it is found to drastically reduce within the N-contained InGaAsN region. Furthermore, the lattice-matched In0.11Ga0.89As0.96N0.04 film is well developed to reduce the density of anti-phase domains.

Original languageEnglish
Title of host publicationAdvances in Material Science and Technology
Pages129-133
Number of pages5
DOIs
Publication statusPublished - 2013 Oct 29
EventInternational Conference on Engineering, Applied Sciences, and Technology, ICEAST 2013 - Bangkok, Thailand
Duration: 2013 Aug 212013 Aug 24

Publication series

NameAdvanced Materials Research
Volume802
ISSN (Print)1022-6680

Other

OtherInternational Conference on Engineering, Applied Sciences, and Technology, ICEAST 2013
CountryThailand
CityBangkok
Period13/8/2113/8/24

Keywords

  • High resolution x-ray diffraction
  • III-V-nitrides
  • MOVPE
  • Solar cells

ASJC Scopus subject areas

  • Engineering(all)

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