Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon

Lu Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Wolfram Miller, Kozo Fujiwara

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Interactions between Σ3 grain boundaries (GBs), small-angle GBs (SAGBs), and general GBs at a silicon crystal/melt interface are studied by in situ observation during directional solidification. The interactions exhibit a dependence on the misorientation angle. SAGBs can propagate through Σ3 GBs, but this behavior transitions into coalescence with Σ3s when the misorientation approaches the limit of a SAGB, i.e. 15°. On the other hand, general GBs show the ability to terminate Σ3 GBs continuously. The present findings suggest that the presence of intrinsic dislocations in GBs plays a role in GB interactions.

Original languageEnglish
Article number100357
JournalMaterialia
Volume7
DOIs
Publication statusPublished - 2019 Sep

Keywords

  • Directional solidification
  • Grain boundary
  • Multicrystalline Si

ASJC Scopus subject areas

  • Materials Science(all)

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