In this paper, we describe the use of ozone microbubbles in photoresist removal from silicon wafers. Ozonized water has attracted much attention as an environmental friendly cleaning method in semiconductor manufacturing. However, it would be desirable to enhance the oxidative ability of ozonized water for practical application. The existence of microbubbles in ozonized water has been shown to significantly enhance the photoresist removal rate due to an elevated dissolved ozone concentration (approximately 2.5 times that of ordinary ozone bubbling) and a direct effect of the microbubbles (removal rate is approximately 1.3 times faster than water with the same concentration of dissolved ozone without microbubbles). Additionally, the ozone microbubble solution was able to effectively remove a high-dose ion-implanted photoresist, which is extremely resistant to removal by ozonized water and other wet chemicals because of its amorphous carbon-like layer, or "crust". Electron spin resonance experiments were also performed without the influence of serious metal contamination and indicated the presence of hydroxyl radicals, which are thought to be formed by interaction of ozone with hydroxide ions adsorbed at the gas-water interface upon collapse of the microbubbles. The hydroxyl radicals play an important role in photoresist removal by the ozone microbubble treatment.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films