Abstract
Ballistic model of a graphene bilayer field-effect transistor (GBL FET) was developed. It incorporates the exact graphene bilayer electronic spectrum reminding a "Mexican hat". The isotropic minimum shifted from the center of a band results in a conductance step at low temperature which was so far known for one-dimensional conductors due to conductance quantization. At room temperature a GBL FET exhibits an extremely high transconductance in ON-state. It makes a GBL FET promising for high-frequency analog circuits. We also point out to possibility of electron localization inside the channel on the top of potential barrier.
| Original language | English |
|---|---|
| Article number | 070112 |
| Journal | Japanese journal of applied physics |
| Volume | 50 |
| Issue number | 7 PART 1 |
| DOIs | |
| Publication status | Published - 2011 Jul 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Svintsov, D., Vyurkov, V., Ryzhii, V., & Otsuji, T. (2011). Effect of "Mexican hat" on graphene bilayer field-effect transistor characteristics. Japanese journal of applied physics, 50(7 PART 1), [070112]. https://doi.org/10.1143/JJAP.50.070112