TY - JOUR
T1 - Effect of "Mexican hat" on graphene bilayer field-effect transistor characteristics
AU - Svintsov, Dmitry
AU - Vyurkov, Vladimir
AU - Ryzhii, Victor
AU - Otsuji, Taiichi
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/7
Y1 - 2011/7
N2 - Ballistic model of a graphene bilayer field-effect transistor (GBL FET) was developed. It incorporates the exact graphene bilayer electronic spectrum reminding a "Mexican hat". The isotropic minimum shifted from the center of a band results in a conductance step at low temperature which was so far known for one-dimensional conductors due to conductance quantization. At room temperature a GBL FET exhibits an extremely high transconductance in ON-state. It makes a GBL FET promising for high-frequency analog circuits. We also point out to possibility of electron localization inside the channel on the top of potential barrier.
AB - Ballistic model of a graphene bilayer field-effect transistor (GBL FET) was developed. It incorporates the exact graphene bilayer electronic spectrum reminding a "Mexican hat". The isotropic minimum shifted from the center of a band results in a conductance step at low temperature which was so far known for one-dimensional conductors due to conductance quantization. At room temperature a GBL FET exhibits an extremely high transconductance in ON-state. It makes a GBL FET promising for high-frequency analog circuits. We also point out to possibility of electron localization inside the channel on the top of potential barrier.
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U2 - 10.1143/JJAP.50.070112
DO - 10.1143/JJAP.50.070112
M3 - Article
AN - SCOPUS:79960682325
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7 PART 1
M1 - 070112
ER -