Effect of "Mexican hat" on graphene bilayer field-effect transistor characteristics

Dmitry Svintsov, Vladimir Vyurkov, Victor Ryzhii, Taiichi Otsuji

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3 Citations (Scopus)


Ballistic model of a graphene bilayer field-effect transistor (GBL FET) was developed. It incorporates the exact graphene bilayer electronic spectrum reminding a "Mexican hat". The isotropic minimum shifted from the center of a band results in a conductance step at low temperature which was so far known for one-dimensional conductors due to conductance quantization. At room temperature a GBL FET exhibits an extremely high transconductance in ON-state. It makes a GBL FET promising for high-frequency analog circuits. We also point out to possibility of electron localization inside the channel on the top of potential barrier.

Original languageEnglish
Article number070112
JournalJapanese journal of applied physics
Issue number7 PART 1
Publication statusPublished - 2011 Jul

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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