Effect of mechanical stress on reliability of gate-oxide film in MOS transistors

H. Miura, S. Ikeda, N. Suzuki

Research output: Contribution to journalConference article

27 Citations (Scopus)

Abstract

The effect of mechanical stress on the initial and time-dependent dielectric breakdown characteristics of gate-oxide films in MOS transistors was measured by changing the stress field in both silicon substrates and in the thin films used for the gate electrodes. The initial breakdown failure rate decreases monotonically as internal stress in the gate electrodes is reduced. On the other hand, there is a critical stress beyond which the average lifetime of time-dependent breakdown failure decreases to less than a tenth.

Original languageEnglish
Pages (from-to)743-746
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1996 Dec 81996 Dec 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Effect of mechanical stress on reliability of gate-oxide film in MOS transistors'. Together they form a unique fingerprint.

  • Cite this