Effect of Mechanical Stress on Reliability of Gake-Oxide Film in MOS Transistors

H. Miura; S. Ikeda; N. Suzuki

doi:10.1109/IEDM.1996.554087

Effect of Mechanical Stress on Reliability of Gake-Oxide Film in MOS Transistors

H. Miura, S. Ikeda, N. Suzuki

Research output: Contribution to journal › Conference article › peer-review

30 Citations (Scopus)

Abstract

The effect of mechanical stress on the initial and time-dependent dielectric breakdown characteristics of gate-oxide films in MOS transistors was measured by changing the stress field in both silicon substrates and in the thin films used for the gate electrodes. The initial breakdown failure rate decreases monotonically as internal stress in the gate electrodes is reduced. On the other hand, there is a critical stress beyond which the average lifetime of time-dependent breakdown failure decreases to less than a tenth.

Original language	English
Pages (from-to)	743-746
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.1996.554087
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1996 Dec 8 → 1996 Dec 11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.1996.554087

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title = "Effect of Mechanical Stress on Reliability of Gake-Oxide Film in MOS Transistors",

abstract = "The effect of mechanical stress on the initial and time-dependent dielectric breakdown characteristics of gate-oxide films in MOS transistors was measured by changing the stress field in both silicon substrates and in the thin films used for the gate electrodes. The initial breakdown failure rate decreases monotonically as internal stress in the gate electrodes is reduced. On the other hand, there is a critical stress beyond which the average lifetime of time-dependent breakdown failure decreases to less than a tenth.",

author = "H. Miura and S. Ikeda and N. Suzuki",

note = "Publisher Copyright: {\textcopyright} 1996 IEEE; Proceedings of the 1996 IEEE International Electron Devices Meeting ; Conference date: 08-12-1996 Through 11-12-1996",

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AU - Miura, H.

AU - Ikeda, S.

AU - Suzuki, N.

PY - 1996

Y1 - 1996

N2 - The effect of mechanical stress on the initial and time-dependent dielectric breakdown characteristics of gate-oxide films in MOS transistors was measured by changing the stress field in both silicon substrates and in the thin films used for the gate electrodes. The initial breakdown failure rate decreases monotonically as internal stress in the gate electrodes is reduced. On the other hand, there is a critical stress beyond which the average lifetime of time-dependent breakdown failure decreases to less than a tenth.

AB - The effect of mechanical stress on the initial and time-dependent dielectric breakdown characteristics of gate-oxide films in MOS transistors was measured by changing the stress field in both silicon substrates and in the thin films used for the gate electrodes. The initial breakdown failure rate decreases monotonically as internal stress in the gate electrodes is reduced. On the other hand, there is a critical stress beyond which the average lifetime of time-dependent breakdown failure decreases to less than a tenth.

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DO - 10.1109/IEDM.1996.554087

M3 - Conference article

AN - SCOPUS:0030396086

SN - 0163-1918

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting

Y2 - 8 December 1996 through 11 December 1996

ER -

Effect of Mechanical Stress on Reliability of Gake-Oxide Film in MOS Transistors

Abstract

ASJC Scopus subject areas

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