Effect of low-temperature annealing on (Ga,Mn)As trilayer structures

D. Chiba, K. Takamura, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

222 Citations (Scopus)

Abstract

The effect of low-temperature annealing on (Ga,Mn)As trilayer structures was investigated. The annealing was done at 250-280 °C in air and the temperature dependence of the magnetic moment was measured as a function of annealing time. The annealing time and thickness dependence of TC suggested that diffusion process from the surface is involved in the modification of the properties of the film by annealing.

Original languageEnglish
Pages (from-to)3020-3022
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number18
DOIs
Publication statusPublished - 2003 May 5

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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