TY - JOUR
T1 - Effect of Li+ co-doping on the luminescence and defects creation processes in Gd3(Ga,Al)5O12:Ce scintillation crystals
AU - Zazubovich, S.
AU - Laguta, V. V.
AU - Machek, P.
AU - Kamada, K.
AU - Yoshikawa, A.
AU - Nikl, M.
N1 - Funding Information:
This work was supported by the Czech Ministry of Education, Youth and Sports under Project SOLID21 CZ.02.1.01/0.0/0.0/16_019/0000760 and Czech Science Foundation project 20-12885S and AS CR- JSPS Mobility + collaborative project. The authors thank also V. Babin for absorption spectra measurement and K. Jurek for electron microprobe X-ray microanalysis.
Publisher Copyright:
© 2021 Elsevier B.V.
PY - 2022/2
Y1 - 2022/2
N2 - Photo- and thermally stimulated luminescence characteristics, as well as photostimulated defects creation processes are investigated in the 85–510 K temperature range for the Li+ co-doped single crystal of Gd3(Ga,Al)5O12:Ce (GAGG:Ce). The results for GAGG:Ce,Li are compared with the corresponding characteristics of the GAGG:Ce and GAGG:Ce, Mg single crystals of similar host composition. The influence of Li+ and Mg2+ ions on the Ce3+ - related emission band position, temperature dependence of the photoluminescence intensity, efficiency of the Gd3+ → Ce3+ energy transfer, intensity and decay kinetics of the afterglow, and thermally stimulated luminescence characteristics is revealed. The presence of the Ce3+ → Ce4+ conversion in GAGG:Ce,Li is confirmed. The conclusion is made that, unlike GAGG:Ce,Mg, the compensation of the Li+ excess negative charge in GAGG:Ce,Li occurs due to both the Ce3+ → Ce4+ conversion and the effective formation of intrinsic crystal lattice defects. The origin of these defects as well as the origin of the electron and hole trapping centers in the GAGG:Ce,Li crystal are discussed.
AB - Photo- and thermally stimulated luminescence characteristics, as well as photostimulated defects creation processes are investigated in the 85–510 K temperature range for the Li+ co-doped single crystal of Gd3(Ga,Al)5O12:Ce (GAGG:Ce). The results for GAGG:Ce,Li are compared with the corresponding characteristics of the GAGG:Ce and GAGG:Ce, Mg single crystals of similar host composition. The influence of Li+ and Mg2+ ions on the Ce3+ - related emission band position, temperature dependence of the photoluminescence intensity, efficiency of the Gd3+ → Ce3+ energy transfer, intensity and decay kinetics of the afterglow, and thermally stimulated luminescence characteristics is revealed. The presence of the Ce3+ → Ce4+ conversion in GAGG:Ce,Li is confirmed. The conclusion is made that, unlike GAGG:Ce,Mg, the compensation of the Li+ excess negative charge in GAGG:Ce,Li occurs due to both the Ce3+ → Ce4+ conversion and the effective formation of intrinsic crystal lattice defects. The origin of these defects as well as the origin of the electron and hole trapping centers in the GAGG:Ce,Li crystal are discussed.
KW - Garnet crystals
KW - Lattice defects
KW - Luminescence
KW - Scintillators
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U2 - 10.1016/j.jlumin.2021.118548
DO - 10.1016/j.jlumin.2021.118548
M3 - Article
AN - SCOPUS:85118182364
VL - 242
JO - Journal of Luminescence
JF - Journal of Luminescence
SN - 0022-2313
M1 - 118548
ER -