Effect of Li addition on the formation of Na-β/βʹʹ-alumina film by laser chemical vapor deposition

Chen Chi; Hirokazu Katsui; Takashi Goto

doi:10.1016/j.ceramint.2016.10.077

Effect of Li addition on the formation of Na-β/βʹʹ-alumina film by laser chemical vapor deposition

Chen Chi, Hirokazu Katsui, Takashi Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Films composed of a mixture of Na-β- and βʹʹ aluminas (β/βʹʹ-alumina) were prepared via laser chemical vapor deposition (CVD) upon the addition of Li. The effect of the Li source gas on the phase formation, microstructure and deposition rates of the β/βʹʹ-alumina films was investigated. The Na-β/βʹʹ-alumina films were formed at a Li/Al precursor supply ratio (R_Li/Al) of 0.1–1.0 within a deposition temperature (T_dep) range of 1100–1220 K. The Na-β/βʹʹ-alumina phase was exclusively formed at T_dep=1165–1185 K and R_Li/Al=0.1–0.5, whereas α-Al₂O₃ (with minor amounts of LiAlO₂ and LiAl₅O₈) was predominantly observed at T_dep>1223 K and R_Li/Al >1.0. The Na-β/βʹʹ-alumina films were composed of polygonal facets in sizes of several hundred nanometers with a columnar cross section. The deposition rate of the Na-β/βʹʹ-alumina film was 60 µm h⁻¹.

Original language	English
Pages (from-to)	1278-1283
Number of pages	6
Journal	Ceramics International
Volume	43
Issue number	1
DOIs	https://doi.org/10.1016/j.ceramint.2016.10.077
Publication status	Published - 2017 Jan 1

Keywords

Beta-alumina
Laser chemical vapor deposition
Low deposition temperature
Microstructure
Stabilization

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2016.10.077

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title = "Effect of Li addition on the formation of Na-β/βʹʹ-alumina film by laser chemical vapor deposition",

abstract = "Films composed of a mixture of Na-β- and βʹʹ aluminas (β/βʹʹ-alumina) were prepared via laser chemical vapor deposition (CVD) upon the addition of Li. The effect of the Li source gas on the phase formation, microstructure and deposition rates of the β/βʹʹ-alumina films was investigated. The Na-β/βʹʹ-alumina films were formed at a Li/Al precursor supply ratio (RLi/Al) of 0.1–1.0 within a deposition temperature (Tdep) range of 1100–1220 K. The Na-β/βʹʹ-alumina phase was exclusively formed at Tdep=1165–1185 K and RLi/Al=0.1–0.5, whereas α-Al2O3 (with minor amounts of LiAlO2 and LiAl5O8) was predominantly observed at Tdep>1223 K and RLi/Al >1.0. The Na-β/βʹʹ-alumina films were composed of polygonal facets in sizes of several hundred nanometers with a columnar cross section. The deposition rate of the Na-β/βʹʹ-alumina film was 60 µm h−1.",

keywords = "Beta-alumina, Laser chemical vapor deposition, Low deposition temperature, Microstructure, Stabilization",

author = "Chen Chi and Hirokazu Katsui and Takashi Goto",

note = "Funding Information: This work was partially supported by Grant-in-Aid for Young Scientists (A) No. 16H06121 , Ministry of Education, Culture, Sports, Science and Technology ( MEXT ), Japan, a cooperative program of the ARCMG-IMR No. 16G0405 , Tohoku University , Japan, and China Scholarship Council and the 111 Project (B13035) of China. Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd and Techna Group S.r.l.",

year = "2017",

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doi = "10.1016/j.ceramint.2016.10.077",

language = "English",

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T1 - Effect of Li addition on the formation of Na-β/βʹʹ-alumina film by laser chemical vapor deposition

AU - Chi, Chen

AU - Katsui, Hirokazu

AU - Goto, Takashi

N1 - Funding Information: This work was partially supported by Grant-in-Aid for Young Scientists (A) No. 16H06121 , Ministry of Education, Culture, Sports, Science and Technology ( MEXT ), Japan, a cooperative program of the ARCMG-IMR No. 16G0405 , Tohoku University , Japan, and China Scholarship Council and the 111 Project (B13035) of China. Publisher Copyright: © 2016 Elsevier Ltd and Techna Group S.r.l.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Films composed of a mixture of Na-β- and βʹʹ aluminas (β/βʹʹ-alumina) were prepared via laser chemical vapor deposition (CVD) upon the addition of Li. The effect of the Li source gas on the phase formation, microstructure and deposition rates of the β/βʹʹ-alumina films was investigated. The Na-β/βʹʹ-alumina films were formed at a Li/Al precursor supply ratio (RLi/Al) of 0.1–1.0 within a deposition temperature (Tdep) range of 1100–1220 K. The Na-β/βʹʹ-alumina phase was exclusively formed at Tdep=1165–1185 K and RLi/Al=0.1–0.5, whereas α-Al2O3 (with minor amounts of LiAlO2 and LiAl5O8) was predominantly observed at Tdep>1223 K and RLi/Al >1.0. The Na-β/βʹʹ-alumina films were composed of polygonal facets in sizes of several hundred nanometers with a columnar cross section. The deposition rate of the Na-β/βʹʹ-alumina film was 60 µm h−1.

AB - Films composed of a mixture of Na-β- and βʹʹ aluminas (β/βʹʹ-alumina) were prepared via laser chemical vapor deposition (CVD) upon the addition of Li. The effect of the Li source gas on the phase formation, microstructure and deposition rates of the β/βʹʹ-alumina films was investigated. The Na-β/βʹʹ-alumina films were formed at a Li/Al precursor supply ratio (RLi/Al) of 0.1–1.0 within a deposition temperature (Tdep) range of 1100–1220 K. The Na-β/βʹʹ-alumina phase was exclusively formed at Tdep=1165–1185 K and RLi/Al=0.1–0.5, whereas α-Al2O3 (with minor amounts of LiAlO2 and LiAl5O8) was predominantly observed at Tdep>1223 K and RLi/Al >1.0. The Na-β/βʹʹ-alumina films were composed of polygonal facets in sizes of several hundred nanometers with a columnar cross section. The deposition rate of the Na-β/βʹʹ-alumina film was 60 µm h−1.

KW - Beta-alumina

KW - Laser chemical vapor deposition

KW - Low deposition temperature

KW - Microstructure

KW - Stabilization

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EP - 1283

JO - Ceramics International

JF - Ceramics International

SN - 0272-8842

IS - 1

ER -

Effect of Li addition on the formation of Na-β/βʹʹ-alumina film by laser chemical vapor deposition

Abstract

Keywords

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