Effect of lattice mismatch on surface morphology of InAs quantum dots on (100) In1-xAlxAs/InP

B. H. Koo, T. Hanada, H. Makino, T. Yao

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17 Citations (Scopus)

Abstract

We present the results of the formation of the InAs quantum dots (QDs) on the (100) In1-xAlxAs(InAlAs)/InP substrate by using relaxed InAlAs buffer layers with different compositions. Variations of surface morphology of InAs QDs as a function of InAs-InAlAs lattice mismatch have been evaluated by atomic force microscopy. When the lattice mismatch increases from 2.4% to 4.2%, the size of QDs decreases, and the density of QDs increases. Each of these dependences can be fitted to a power function of the misfit unless the Al diffusion, roughness of the buffer layer, and/or the ripening of small dots modify the size and density.

Original languageEnglish
Pages (from-to)4331-4333
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number26
DOIs
Publication statusPublished - 2001 Dec 24

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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