Abstract
We investigated the InGaN/GaN multiple quantum well (MQW) thickness and cathode luminescence (CL) distribution on nonpolar (11-20)GaN, semipolar (11-22)GaN, and (1-101)GaN microstripes grown by selective metal-organic vapor phase epitaxy (MOVPE) on patterned Si substrates. All samples exhibited ridge growth. To clarify the effect of vapor phase diffusion, the two-dimensional diffusion equation was solved. The results were in good agreement with the thickness distribution on the (11-20)GaN stripe when we assumed D/k 0 to be 1 μm. However, the results were not in agreement for the semipolar case. On the semipolar face, the surface migration length might be greater, thus increasing the thickness nonuniformity. CL analysis indicated a uniform indium composition on the (11-20) and (11-22) faces. On the (1-101)GaN stripe, the indium composition decreased near the (0001) edge. Excess Ga is considered to affect the compositional nonuniformity on the (1-101) facet.
Original language | English |
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Pages (from-to) | 1175-1178 |
Number of pages | 4 |
Journal | Physica Status Solidi (A) Applications and Materials Science |
Volume | 208 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2011 May |
Keywords
- InGaN
- selective-area growth
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry