Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes

We investigated the InGaN/GaN multiple quantum well (MQW) thickness and cathode luminescence (CL) distribution on nonpolar (11-20)GaN, semipolar (11-22)GaN, and (1-101)GaN microstripes grown by selective metal-organic vapor phase epitaxy (MOVPE) on patterned Si substrates. All samples exhibited ridge growth. To clarify the effect of vapor phase diffusion, the two-dimensional diffusion equation was solved. The results were in good agreement with the thickness distribution on the (11-20)GaN stripe when we assumed D/k ₀ to be 1 μm. However, the results were not in agreement for the semipolar case. On the semipolar face, the surface migration length might be greater, thus increasing the thickness nonuniformity. CL analysis indicated a uniform indium composition on the (11-20) and (11-22) faces. On the (1-101)GaN stripe, the indium composition decreased near the (0001) edge. Excess Ga is considered to affect the compositional nonuniformity on the (1-101) facet.