Effect of laser power on microstructure and dielectric properties of BaTi5O11 films prepared by laser chemical vapor deposition method

Dongyun Guo; Akihiko Ito; Takashi Goto; Rong Tu; Chuanbin Wang; Qiang Shen; Lianmeng Zhang

doi:10.1007/s10854-012-0688-7

Effect of laser power on microstructure and dielectric properties of BaTi₅O₁₁ films prepared by laser chemical vapor deposition method

Dongyun Guo, Akihiko Ito, Takashi Goto, Rong Tu, Chuanbin Wang, Qiang Shen, Lianmeng Zhang

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

BaTi₅O₁₁ films were prepared on Pt/Ti/SiO ₂/Si substrates by a laser chemical vapor deposition method. The effect of laser power (PL) on microstructure and dielectric properties of the BaTi₅O₁₁ films was investigated. With increasing PL from 62 to 108 W, the deposition temperature (Tdep) monotonously increased from 872 to 951 K. At Tdep = 920 K (PL = 90 W), the BaTi₅O₁₁ film had (301) preferred orientation. At Tdep C 938 K (PL C 98 W), the preferred orientation changed to (322)/(223). The deposition rate (Rdep) was 154.8-177.6 μm h^-1. With increasing Tdep, the surface morphologies changed from rectangular to pyramidal, and the dielectric constant (er) increased from 18.3 to 21.4 at 1 MHz and 300 K.

Original language	English
Pages (from-to)	1961-1964
Number of pages	4
Journal	Journal of Materials Science: Materials in Electronics
Volume	23
Issue number	11
DOIs	https://doi.org/10.1007/s10854-012-0688-7
Publication status	Published - 2012 Nov

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s10854-012-0688-7

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@article{29b3cd524ee14c7bb19ed0b951240de6,

title = "Effect of laser power on microstructure and dielectric properties of BaTi5O11 films prepared by laser chemical vapor deposition method",

abstract = "BaTi5O11 films were prepared on Pt/Ti/SiO 2/Si substrates by a laser chemical vapor deposition method. The effect of laser power (PL) on microstructure and dielectric properties of the BaTi5O11 films was investigated. With increasing PL from 62 to 108 W, the deposition temperature (Tdep) monotonously increased from 872 to 951 K. At Tdep = 920 K (PL = 90 W), the BaTi5O11 film had (301) preferred orientation. At Tdep C 938 K (PL C 98 W), the preferred orientation changed to (322)/(223). The deposition rate (Rdep) was 154.8-177.6 μm h-1. With increasing Tdep, the surface morphologies changed from rectangular to pyramidal, and the dielectric constant (er) increased from 18.3 to 21.4 at 1 MHz and 300 K.",

author = "Dongyun Guo and Akihiko Ito and Takashi Goto and Rong Tu and Chuanbin Wang and Qiang Shen and Lianmeng Zhang",

note = "Funding Information: Acknowledgment This work was supported in part by Global COE Program of the Materials Integration, Tohoku University, and by the International Science and Technology Cooperation Program of China (Grant no. 2009DFB50470).",

year = "2012",

month = nov,

doi = "10.1007/s10854-012-0688-7",

language = "English",

volume = "23",

pages = "1961--1964",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

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T1 - Effect of laser power on microstructure and dielectric properties of BaTi5O11 films prepared by laser chemical vapor deposition method

AU - Guo, Dongyun

AU - Ito, Akihiko

AU - Goto, Takashi

AU - Tu, Rong

AU - Wang, Chuanbin

AU - Shen, Qiang

AU - Zhang, Lianmeng

N1 - Funding Information: Acknowledgment This work was supported in part by Global COE Program of the Materials Integration, Tohoku University, and by the International Science and Technology Cooperation Program of China (Grant no. 2009DFB50470).

PY - 2012/11

Y1 - 2012/11

N2 - BaTi5O11 films were prepared on Pt/Ti/SiO 2/Si substrates by a laser chemical vapor deposition method. The effect of laser power (PL) on microstructure and dielectric properties of the BaTi5O11 films was investigated. With increasing PL from 62 to 108 W, the deposition temperature (Tdep) monotonously increased from 872 to 951 K. At Tdep = 920 K (PL = 90 W), the BaTi5O11 film had (301) preferred orientation. At Tdep C 938 K (PL C 98 W), the preferred orientation changed to (322)/(223). The deposition rate (Rdep) was 154.8-177.6 μm h-1. With increasing Tdep, the surface morphologies changed from rectangular to pyramidal, and the dielectric constant (er) increased from 18.3 to 21.4 at 1 MHz and 300 K.

AB - BaTi5O11 films were prepared on Pt/Ti/SiO 2/Si substrates by a laser chemical vapor deposition method. The effect of laser power (PL) on microstructure and dielectric properties of the BaTi5O11 films was investigated. With increasing PL from 62 to 108 W, the deposition temperature (Tdep) monotonously increased from 872 to 951 K. At Tdep = 920 K (PL = 90 W), the BaTi5O11 film had (301) preferred orientation. At Tdep C 938 K (PL C 98 W), the preferred orientation changed to (322)/(223). The deposition rate (Rdep) was 154.8-177.6 μm h-1. With increasing Tdep, the surface morphologies changed from rectangular to pyramidal, and the dielectric constant (er) increased from 18.3 to 21.4 at 1 MHz and 300 K.

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DO - 10.1007/s10854-012-0688-7

M3 - Article

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SN - 0957-4522

VL - 23

SP - 1961

EP - 1964

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 11

ER -

Effect of laser power on microstructure and dielectric properties of BaTi₅O₁₁ films prepared by laser chemical vapor deposition method

Abstract

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