Effect of ion attachment on mechanical dissipation of a resonator

Takahito Ono, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The influence of adsorbates on the surface-related mechanical dissipation of a silicon resonator was investigated. Different ion species were attached on a silicon resonator with a native oxide, and the quality factor (Q factor) and resonant frequency changes were observed by in situ measurement. It was found that water ion attachment creates OH terminations and results in a similar Q factor to that after exposure to the atmosphere. Nitrogen ions created very active sites for surface mechanical dissipation. In contrast, exposure to hydrogen ions increased the Q factor by a factor of 2. Hydrogen ions caused the dissipation sites on the surface to become inactive or less active for surface-related mechanical dissipation.

Original languageEnglish
Article number044105
JournalApplied Physics Letters
Volume87
Issue number4
DOIs
Publication statusPublished - 2005 Jul 25

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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