Effect of iodotrifluoromethane plasma for reducing ultraviolet light irradiation damage in dielectric film etching processes

Yoshinari Ichihashi, Yasushi Ishikawa, Ryu Shimizu, Seiji Samukawa

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Iodotrifluoromethane (CF3 I) gas is one of the environmentally conscious perfluorocarbon gases because it has a very low global warming potential. The authors have found that CF3 I gas plasma drastically reduces ultraviolet (UV) photon irradiation of ∼4.0 eV, which corresponds to the excitation energy at silicon dioxide (SiO2) /silicon (Si) interfaces, in comparison with octafluorocyclobutane (C4 F 8) gas. This results in reducing UV irradiation damage in dielectric film etching processes, which was experimentally confirmed by evaluating charge-pumping currents in metal insulator semiconductor field effect transistors fabricated by using CF3 I gas etching. They have also demonstrated that a novel etching method using pulse-time modulation of CF 3 I gas plasma for the first time further reduced UV light irradiation damage.

Original languageEnglish
Pages (from-to)577-580
Number of pages4
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume28
Issue number3
DOIs
Publication statusPublished - 2010 May

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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