Abstract
The crystal structure, thermoelectric properties, and microstructure of polycrystalline samples with nominal compositions Mg2+xSi (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) have been investigated. It is revealed that the Mg2+xSi samples were composites consisting of Mg2Si matrix with dispersed Mg metal. The Mg2Si crystals contained a small amount of Mg atoms at interstitial (1/2 1/2 1/2) site (Mgi). In addition, Mg metal was present at grain boundaries between Mg2Si crystal grains (MgGB). Regarding thermoelectric properties, the electrical conductivity and Seebeck coefficient of Mg2+xSi were measured and their x dependences were discussed in terms of the amounts of Mgi and MgGB. The amount of MgGB and the electrical conductivity indicate quite similar x dependences.
Original language | English |
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Pages (from-to) | 1589-1593 |
Number of pages | 5 |
Journal | Journal of Electronic Materials |
Volume | 45 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2016 Mar 1 |
Keywords
- Magnesium silicide
- composite structure
- interstitial Mg
- thermoelectric properties
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry