Effect of Interstitial Mg in Mg2+xSi on Electrical Conductivity  and Seebeck Coefficient

M. Kubouchi; Y. Ogawa; K. Hayashi; T. Takamatsu; Y. Miyazaki

doi:10.1007/s11664-015-4126-5

Effect of Interstitial Mg in Mg_2+xSi on Electrical Conductivity and Seebeck Coefficient

M. Kubouchi, Y. Ogawa, K. Hayashi, T. Takamatsu, Y. Miyazaki

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The crystal structure, thermoelectric properties, and microstructure of polycrystalline samples with nominal compositions Mg_2+xSi (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) have been investigated. It is revealed that the Mg_2+xSi samples were composites consisting of Mg₂Si matrix with dispersed Mg metal. The Mg₂Si crystals contained a small amount of Mg atoms at interstitial (1/2 1/2 1/2) site (Mg_i). In addition, Mg metal was present at grain boundaries between Mg₂Si crystal grains (Mg_GB). Regarding thermoelectric properties, the electrical conductivity and Seebeck coefficient of Mg_2+xSi were measured and their x dependences were discussed in terms of the amounts of Mg_i and Mg_GB. The amount of Mg_GB and the electrical conductivity indicate quite similar x dependences.

Original language	English
Pages (from-to)	1589-1593
Number of pages	5
Journal	Journal of Electronic Materials
Volume	45
Issue number	3
DOIs	https://doi.org/10.1007/s11664-015-4126-5
Publication status	Published - 2016 Mar 1

Keywords

Magnesium silicide
composite structure
interstitial Mg
thermoelectric properties

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-015-4126-5

Cite this

@article{1b31a665c49948fb91b0aecd1b92fc8b,

title = "Effect of Interstitial Mg in Mg2+xSi on Electrical Conductivity and Seebeck Coefficient",

abstract = "The crystal structure, thermoelectric properties, and microstructure of polycrystalline samples with nominal compositions Mg2+xSi (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) have been investigated. It is revealed that the Mg2+xSi samples were composites consisting of Mg2Si matrix with dispersed Mg metal. The Mg2Si crystals contained a small amount of Mg atoms at interstitial (1/2 1/2 1/2) site (Mgi). In addition, Mg metal was present at grain boundaries between Mg2Si crystal grains (MgGB). Regarding thermoelectric properties, the electrical conductivity and Seebeck coefficient of Mg2+xSi were measured and their x dependences were discussed in terms of the amounts of Mgi and MgGB. The amount of MgGB and the electrical conductivity indicate quite similar x dependences.",

keywords = "Magnesium silicide, composite structure, interstitial Mg, thermoelectric properties",

author = "M. Kubouchi and Y. Ogawa and K. Hayashi and T. Takamatsu and Y. Miyazaki",

note = "Publisher Copyright: {\textcopyright} 2015, The Minerals, Metals & Materials Society.",

year = "2016",

month = mar,

day = "1",

doi = "10.1007/s11664-015-4126-5",

language = "English",

volume = "45",

pages = "1589--1593",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "3",

}

TY - JOUR

T1 - Effect of Interstitial Mg in Mg2+xSi on Electrical Conductivity and Seebeck Coefficient

AU - Kubouchi, M.

AU - Ogawa, Y.

AU - Hayashi, K.

AU - Takamatsu, T.

AU - Miyazaki, Y.

PY - 2016/3/1

Y1 - 2016/3/1

N2 - The crystal structure, thermoelectric properties, and microstructure of polycrystalline samples with nominal compositions Mg2+xSi (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) have been investigated. It is revealed that the Mg2+xSi samples were composites consisting of Mg2Si matrix with dispersed Mg metal. The Mg2Si crystals contained a small amount of Mg atoms at interstitial (1/2 1/2 1/2) site (Mgi). In addition, Mg metal was present at grain boundaries between Mg2Si crystal grains (MgGB). Regarding thermoelectric properties, the electrical conductivity and Seebeck coefficient of Mg2+xSi were measured and their x dependences were discussed in terms of the amounts of Mgi and MgGB. The amount of MgGB and the electrical conductivity indicate quite similar x dependences.

AB - The crystal structure, thermoelectric properties, and microstructure of polycrystalline samples with nominal compositions Mg2+xSi (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) have been investigated. It is revealed that the Mg2+xSi samples were composites consisting of Mg2Si matrix with dispersed Mg metal. The Mg2Si crystals contained a small amount of Mg atoms at interstitial (1/2 1/2 1/2) site (Mgi). In addition, Mg metal was present at grain boundaries between Mg2Si crystal grains (MgGB). Regarding thermoelectric properties, the electrical conductivity and Seebeck coefficient of Mg2+xSi were measured and their x dependences were discussed in terms of the amounts of Mgi and MgGB. The amount of MgGB and the electrical conductivity indicate quite similar x dependences.

KW - Magnesium silicide

KW - composite structure

KW - interstitial Mg

KW - thermoelectric properties

UR - http://www.scopus.com/inward/record.url?scp=84959521334&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84959521334&partnerID=8YFLogxK

U2 - 10.1007/s11664-015-4126-5

DO - 10.1007/s11664-015-4126-5

M3 - Article

AN - SCOPUS:84959521334

VL - 45

SP - 1589

EP - 1593

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 3

ER -