Effect of Interstitial Mg in Mg2+xSi on Electrical Conductivity and Seebeck Coefficient

M. Kubouchi, Y. Ogawa, K. Hayashi, T. Takamatsu, Y. Miyazaki

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The crystal structure, thermoelectric properties, and microstructure of polycrystalline samples with nominal compositions Mg2+xSi (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) have been investigated. It is revealed that the Mg2+xSi samples were composites consisting of Mg2Si matrix with dispersed Mg metal. The Mg2Si crystals contained a small amount of Mg atoms at interstitial (1/2 1/2 1/2) site (Mgi). In addition, Mg metal was present at grain boundaries between Mg2Si crystal grains (MgGB). Regarding thermoelectric properties, the electrical conductivity and Seebeck coefficient of Mg2+xSi were measured and their x dependences were discussed in terms of the amounts of Mgi and MgGB. The amount of MgGB and the electrical conductivity indicate quite similar x dependences.

Original languageEnglish
Pages (from-to)1589-1593
Number of pages5
JournalJournal of Electronic Materials
Volume45
Issue number3
DOIs
Publication statusPublished - 2016 Mar 1

Keywords

  • Magnesium silicide
  • composite structure
  • interstitial Mg
  • thermoelectric properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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