Effect of internal radiative heat transfer on interface inversion in Czochralski crystal growth of oxides

M. Kobayashi, T. Hagino, T. Tsukada, M. Hozawa

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66 Citations (Scopus)

Abstract

A global analysis of heat transfer was carried out to investigate the effect of internal radiative heat transfer in the crystal and/or melt on the interface inversion in Czochralski growth of an oxide crystal. As a result, it was found that the critical Reynolds number at which the interface inversion occurs decreases with the optical thickness of the crystal when the melt is opaque. However, when the melt is semitransparent and its optical thickness is the same as the crystal's, the critical Reynolds number has a maximum value for a certain optical thickness of the crystal and melt, depending on the melt flow structure composed of the free convection and the forced convection caused by the crystal rotation.

Original languageEnglish
Pages (from-to)258-270
Number of pages13
JournalJournal of Crystal Growth
Volume235
Issue number1-4
DOIs
Publication statusPublished - 2002 Feb 1

Keywords

  • A1. Computer simulation
  • A1. Heat transfer
  • A1. Interface inversion
  • A2. Czochralski method
  • B1. Oxides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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