Effect of interface inversion on thermal stress field in cz crystal growth of oxide

Takao Tsukada, Mitsunori Hozawa, Tsjnmtvtikt Tmatsht

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

For CZ crystal growth of an oxide (A1203), finite element analyses of the thermal stress field in the crystal are carried out, and the effect of interface shape on the maximum shear stress in the crystal is investigated. When the crystal rotation rate increases, with other operating conditions unchanged, the melt/crystal interface changes its shape from convex to concave toward the melt at the critical Reynolds number {Ref). When Res < Ref, the maximum value of the thermal stress on the interface is insensible to Resand its radial profile is an inversed W-shape. When Resexceeds Ref, however, thermal stress on the interface increases very rapidly and its radial profile becomes W-shaped.

Original languageEnglish
Pages (from-to)286-290
Number of pages5
JournalJOURNAL of CHEMICAL ENGINEERING of JAPAN
Volume23
Issue number3
DOIs
Publication statusPublished - 1990
Externally publishedYes

Keywords

  • Crystal Growth
  • Czochralski Method
  • Finite Element Method
  • Interface Inversion
  • Oxide
  • Sapphire
  • Thermal Stress

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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