Effect of interface characteristics of W/HfO2±x on electronic reliability: Quantum chemical molecular dynamics study

Ken Suzuki, Tatsuya Inoue, Hideo Miura

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

The effect of point defects such as oxygen vacancy and carbon interstitial on structural characteristics of W/HfO2 was analyzed by a quantum chemical molecular dynamics method. Post-oxidation annealing is effective for eliminating the oxygen deficiency of gate dielectric films. However, the excess oxygen atoms may remain in the oxide film after the post-oxidation anneal. For HfO2, they produce acceptor states in band gap and thus, give rise to the shrinkage of the local band gap of the oxide. In addition, such excess oxygen interstitials have been found to form a tungsten oxide layer at W/HfO2 interface during the deposition process of a tungsten gate. It is very important, therefore, to minimize the concentration of point defects in the film to assure the reliability of the MOS structures.

Original languageEnglish
Pages357-360
Number of pages4
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan
Duration: 2008 Sep 92008 Sep 11

Other

Other2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
CountryJapan
CityHakone
Period08/9/908/9/11

Keywords

  • Band gap
  • Carbon interstitial
  • HfO
  • Oxygen vacancy
  • Point defect
  • Quantum molecular dynamics
  • Reliability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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