Effect of interface buffer layer on the reliability of ultra-thin MGO magnetic tunnel junctions for spin transfer switching MRAM

Keiji Hosotani, Yoshiaki Asao, Makoto Nagamine, Tomomasa Ueda, Hisanori Aikawa, Naoharu Shimomura, Sumio Ikegawa, Takeshi Kajiyama, Shigeki Takahashi, Akihiro Nitayama, Hiroaki Yoda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

Study of the reliability of ultra-thin MgO tunneling barriers for spin transfer switching magnetoresistive random access memory (MRAM) revealed MgO to be an excellent film with little resistance drift. Precise control of CoFeB/MgO/CoFeB interface was found to be important for making highly reliable tunneling barriers.

Original languageEnglish
Title of host publication2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
Pages650-651
Number of pages2
DOIs
Publication statusPublished - 2007 Sep 25
Event45th Annual IEEE International Reliability Physics Symposium 2007, IRPS - Phoenix, AZ, United States
Duration: 2007 Apr 152007 Apr 19

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Other

Other45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
CountryUnited States
CityPhoenix, AZ
Period07/4/1507/4/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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