Effect of in additions on the thermoelectric properties of the type-I clathrate compound Ba8 Ga16 Ge30

Norihiko L. Okamoto; Kyosuke Kishida; Katsushi Tanaka; Haruyuki Inui

doi:10.1063/1.2743815

Effect of in additions on the thermoelectric properties of the type-I clathrate compound Ba8 Ga16 Ge30

Norihiko L. Okamoto, Kyosuke Kishida, Katsushi Tanaka, Haruyuki Inui

Materials Development Division

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

The thermoelectric properties of quaternary type-I clathrate compounds, Ba8 Ga16-x Inx Ge30 (x=0-9), have been investigated as a function of In content and temperature. The substitution of In atoms for Ga atoms leads to a decrease in electrical resistivity, as well as a decrease in thermal conductivity. The decrease in electrical resisitivity is explained in terms of the In occupancy behavior in the 6c sites, whereas the decrease in thermal conductivity in terms of the increased extent of the rattling motion of Ba atoms due to the increased lattice constant. As a result, the value of thermoelectric dimensionless figure of merit (ZT) of Ba8 Ga16 Ge30 is improved by In substitutions from 0.49 to 1.03 at 670 °C when x=6.

Original language	English
Article number	113525
Journal	Journal of Applied Physics
Volume	101
Issue number	11
DOIs	https://doi.org/10.1063/1.2743815
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Effect of in additions on the thermoelectric properties of the type-I clathrate compound Ba8 Ga16 Ge30",

abstract = "The thermoelectric properties of quaternary type-I clathrate compounds, Ba8 Ga16-x Inx Ge30 (x=0-9), have been investigated as a function of In content and temperature. The substitution of In atoms for Ga atoms leads to a decrease in electrical resistivity, as well as a decrease in thermal conductivity. The decrease in electrical resisitivity is explained in terms of the In occupancy behavior in the 6c sites, whereas the decrease in thermal conductivity in terms of the increased extent of the rattling motion of Ba atoms due to the increased lattice constant. As a result, the value of thermoelectric dimensionless figure of merit (ZT) of Ba8 Ga16 Ge30 is improved by In substitutions from 0.49 to 1.03 at 670 °C when x=6.",

author = "Okamoto, {Norihiko L.} and Kyosuke Kishida and Katsushi Tanaka and Haruyuki Inui",

note = "Funding Information: This work was supported by Grant-in-Aid for Scientific Research (a) from the Ministry of Education, Science and Culture (No. 18206074) and in part by the 21st Century COE (Center of Excellence) Program on United Approach for New Materials Science from the Ministry of Education, Science and Culture. One of the authors (N.L.O.) greatly appreciates the supports from Research Fellowships of the Japan Society for the Promotion of Science for Young Scientists. ",

year = "2007",

doi = "10.1063/1.2743815",

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volume = "101",

journal = "Journal of Applied Physics",

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T1 - Effect of in additions on the thermoelectric properties of the type-I clathrate compound Ba8 Ga16 Ge30

AU - Okamoto, Norihiko L.

AU - Kishida, Kyosuke

AU - Tanaka, Katsushi

AU - Inui, Haruyuki

N1 - Funding Information: This work was supported by Grant-in-Aid for Scientific Research (a) from the Ministry of Education, Science and Culture (No. 18206074) and in part by the 21st Century COE (Center of Excellence) Program on United Approach for New Materials Science from the Ministry of Education, Science and Culture. One of the authors (N.L.O.) greatly appreciates the supports from Research Fellowships of the Japan Society for the Promotion of Science for Young Scientists.

PY - 2007

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N2 - The thermoelectric properties of quaternary type-I clathrate compounds, Ba8 Ga16-x Inx Ge30 (x=0-9), have been investigated as a function of In content and temperature. The substitution of In atoms for Ga atoms leads to a decrease in electrical resistivity, as well as a decrease in thermal conductivity. The decrease in electrical resisitivity is explained in terms of the In occupancy behavior in the 6c sites, whereas the decrease in thermal conductivity in terms of the increased extent of the rattling motion of Ba atoms due to the increased lattice constant. As a result, the value of thermoelectric dimensionless figure of merit (ZT) of Ba8 Ga16 Ge30 is improved by In substitutions from 0.49 to 1.03 at 670 °C when x=6.

AB - The thermoelectric properties of quaternary type-I clathrate compounds, Ba8 Ga16-x Inx Ge30 (x=0-9), have been investigated as a function of In content and temperature. The substitution of In atoms for Ga atoms leads to a decrease in electrical resistivity, as well as a decrease in thermal conductivity. The decrease in electrical resisitivity is explained in terms of the In occupancy behavior in the 6c sites, whereas the decrease in thermal conductivity in terms of the increased extent of the rattling motion of Ba atoms due to the increased lattice constant. As a result, the value of thermoelectric dimensionless figure of merit (ZT) of Ba8 Ga16 Ge30 is improved by In substitutions from 0.49 to 1.03 at 670 °C when x=6.

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