TY - JOUR
T1 - Effect of in additions on the thermoelectric properties of the type-I clathrate compound Ba8 Ga16 Ge30
AU - Okamoto, Norihiko L.
AU - Kishida, Kyosuke
AU - Tanaka, Katsushi
AU - Inui, Haruyuki
N1 - Funding Information:
This work was supported by Grant-in-Aid for Scientific Research (a) from the Ministry of Education, Science and Culture (No. 18206074) and in part by the 21st Century COE (Center of Excellence) Program on United Approach for New Materials Science from the Ministry of Education, Science and Culture. One of the authors (N.L.O.) greatly appreciates the supports from Research Fellowships of the Japan Society for the Promotion of Science for Young Scientists.
PY - 2007
Y1 - 2007
N2 - The thermoelectric properties of quaternary type-I clathrate compounds, Ba8 Ga16-x Inx Ge30 (x=0-9), have been investigated as a function of In content and temperature. The substitution of In atoms for Ga atoms leads to a decrease in electrical resistivity, as well as a decrease in thermal conductivity. The decrease in electrical resisitivity is explained in terms of the In occupancy behavior in the 6c sites, whereas the decrease in thermal conductivity in terms of the increased extent of the rattling motion of Ba atoms due to the increased lattice constant. As a result, the value of thermoelectric dimensionless figure of merit (ZT) of Ba8 Ga16 Ge30 is improved by In substitutions from 0.49 to 1.03 at 670 °C when x=6.
AB - The thermoelectric properties of quaternary type-I clathrate compounds, Ba8 Ga16-x Inx Ge30 (x=0-9), have been investigated as a function of In content and temperature. The substitution of In atoms for Ga atoms leads to a decrease in electrical resistivity, as well as a decrease in thermal conductivity. The decrease in electrical resisitivity is explained in terms of the In occupancy behavior in the 6c sites, whereas the decrease in thermal conductivity in terms of the increased extent of the rattling motion of Ba atoms due to the increased lattice constant. As a result, the value of thermoelectric dimensionless figure of merit (ZT) of Ba8 Ga16 Ge30 is improved by In substitutions from 0.49 to 1.03 at 670 °C when x=6.
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U2 - 10.1063/1.2743815
DO - 10.1063/1.2743815
M3 - Article
AN - SCOPUS:34250638724
VL - 101
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 11
M1 - 113525
ER -