Abstract
A novel process for the formation of amorphous silicon thin film by a coating technique using an organosoluble silicon cluster as a precursor was developed. The process of conversion of organic silicon film to inorganic silicon film was investigated by Raman and Fourier transform infrared (FT-IR) spectroscopies. Upon heat treatment of the precursor film, the disappearance of the organic substituent and the appearance of the transverse optical phonon band of amorphous silicon were observed in Raman spectra. The combination of heat and hydrogen plasma treatments of the thin film reduced the conversion temperature dramatically.
| Original language | English |
|---|---|
| Pages (from-to) | L961-L963 |
| Journal | Japanese journal of applied physics |
| Volume | 39 |
| Issue number | 10 A |
| Publication status | Published - 2000 Oct 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Watanabe, A., Unno, M., Hojo, F., & Miwa, T. (2000). Effect of hydrogen plasma treatment on formation of amorphous silicon film organosoluble silicon cluster as a precursor. Japanese journal of applied physics, 39(10 A), L961-L963.