Effect of hydrogen on silicon nitrides formation by microwave excited plasma enhanced chemical vapor deposition

A. Teramoto, Y. Nakao, T. Suwa, K. Hashimoto, T. Motoya, M. Hirayama, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The gas composition is one of the most important parameters for reducing process temperature of the plasma enhanced chemical vapor deposition. We investigate the effect of the gas flow rate of SiH4, H2, and N2 on the quality and the deposition rate of the silicon nitride films (SiNx) formed by the microwave excited PECVD. The SiH4 flow rate is most important parameter for controlling the deposition rate and the film quality in the PECVD using N2, H2, SiH4 gasses. The deposition rate strongly depends on the SiH4 flow rate; however the film quality was degraded with the increase of the flow rate. The hydrogen has an optimum flow rate for the high deposition rate and high quality film formation. The hydrogen effectively dissociates the SiH4 gas and makes the nitridation species (NHx), as the result, the optimal hydrogen improves the reaction efficiency of SiH4 and NHx.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
EditorsE. P. Gusev, P. J. Timans, F. Roozeboom, S. DeGendt, K. Kakushima, V. Narayanan, Z. Karim
PublisherElectrochemical Society Inc.
Pages151-159
Number of pages9
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015
EventSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States
Duration: 2015 May 242015 May 28

Publication series

NameECS Transactions
Number4
Volume66
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
CountryUnited States
CityChicago
Period15/5/2415/5/28

ASJC Scopus subject areas

  • Engineering(all)

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