Effect of hole-injection layer on top-gate organic field-effect transistors based on soluble benzothienobenzothiophene derivatives

Fumio Mochizuki, Yosuke Miyata, Takashi Nagase, Takashi Kobayashi, Kazuo Takimiya, Masaaki Ikeda, Hiroyoshi Naito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effect of MoO3 hole-injection layers on the electrical characteristics of top-gate Ce-BTBT OFETs has been investigated. The field-effect mobility of short-channel devices is improved by inserting 1-nm-thick M0O3 layers, as a result of the decrease in contact resistance. The dependence of the electrical characteristics on M0O3 thickness is also investigated.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages1022-1025
Number of pages4
Publication statusPublished - 2012 Dec 1
Externally publishedYes
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 2012 Dec 42012 Dec 7

Publication series

NameProceedings of the International Display Workshops
Volume2
ISSN (Print)1883-2490

Other

Other19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
CountryJapan
CityKyoto
Period12/12/412/12/7

Keywords

  • C-BTBT
  • MoO
  • Organic field-effect transistors
  • Short-channel effect

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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