Effect of Hf metal predeposition on the properties of sputtered HfO 2/Hf stacked gate dielectrics

Kazuhiko Yamamoto, Shigenori Hayashi, Masafumi Kubota, Masaaki Niwa

Research output: Contribution to journalArticlepeer-review

95 Citations (Scopus)


The electrical and physical properties of reactively sputtered HfO 2 thin films on predeposited Hf metal layer were investigated. Compared with a conventional deposition process, i.e., direct deposition of HfO2 on a Si substrate, the HfO2/Hf stacked capacitor exhibits excellent electrical characteristics such as capacitance equivalent thickness (CET) as thin as 1.3 nm with lower leakage current of 2×10 -5(A/cm2) at -1 V gate bias. Based on the structural analysis as well as the electrical characteristics, the interfacial layer thickness is found to be controllable with minimum CET and higher permittivity by optimizing the thickness ratio between HfO2 and Hf. This improvement in electrical characteristics can be explained by the blocking of oxygen diffusion through HfO2 films into the Si substrate due to oxidation of the Hf metal layer itself.

Original languageEnglish
Pages (from-to)2053-2055
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2002 Sep 9
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Effect of Hf metal predeposition on the properties of sputtered HfO <sub>2</sub>/Hf stacked gate dielectrics'. Together they form a unique fingerprint.

Cite this