Effect of heavy boron doping on pressure-induced phase transitions in single-crystal silicon

X. Q. Yan, X. M. Huang, S. Uda, M. W. Chen

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

The influence of applied loads and loading/unloading rates on pressure-induced phase transitions in lightly and heavily boron-doped silicon was systematically investigated. The resultant phases were plotted into two-dimensional maps with applied loads and loading/unloading rates as the coordinate axes. The formation region of the amorphous phase in the heavily boron-doped silicon was found to be much larger than that in the lightly boron-doped one, suggesting that heavy boron doping promotes the amorphization in silicon.

Original languageEnglish
Article number191911
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number19
DOIs
Publication statusPublished - 2005 Nov 7

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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