Effect of heavy boron doping on pressure-induced phase transitions in single-crystal silicon

X. Q. Yan; X. M. Huang; S. Uda; M. W. Chen

doi:10.1063/1.2120920

Effect of heavy boron doping on pressure-induced phase transitions in single-crystal silicon

X. Q. Yan, X. M. Huang, S. Uda, M. W. Chen

Materials Development Division

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The influence of applied loads and loading/unloading rates on pressure-induced phase transitions in lightly and heavily boron-doped silicon was systematically investigated. The resultant phases were plotted into two-dimensional maps with applied loads and loading/unloading rates as the coordinate axes. The formation region of the amorphous phase in the heavily boron-doped silicon was found to be much larger than that in the lightly boron-doped one, suggesting that heavy boron doping promotes the amorphization in silicon.

Original language	English
Article number	191911
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	19
DOIs	https://doi.org/10.1063/1.2120920
Publication status	Published - 2005 Nov 7

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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