Effect of growth stoichiometry on the structural properties of AlN films on thermally nitrided sapphire (1120)

Kohei Ueno, Eiji Kishikawa, Shigeru Inoue, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima, Hiroyuki Fukuyama

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

High-quality AlN epilayers were grown via pulsed sputtering deposition on thermally nitrided sapphire $(11\bar 20)$ with precise control of the N/Al ratio. Under slightly Al-rich growth conditions, the growth of AlN epilayers on the thermally nitrided sapphire proceeded in a two-dimensional mode from the initial stage of growth, and their surfaces were atomically flat stepped and terraced structures. The FWHM values of the X-ray rocking curves were as low as 87 arcsec and 339 arcsec for the 0002 and $1 \bar 102$ diffractions, respectively, at a film thickness of 400 nm. The present approach is therefore quite promising for the low-cost fabrication of AlGaN-based UV optical devices.

Original languageEnglish
Pages (from-to)256-259
Number of pages4
JournalPhysica Status Solidi - Rapid Research Letters
Volume8
Issue number3
DOIs
Publication statusPublished - 2014 Mar

Keywords

  • AlN
  • Sapphire
  • Sputtering
  • Structure
  • Thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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